Atomic Layer Deposited Aluminum Oxide for Interface Passivation of Cu2ZnSn(S,Se)4Thin-Film Solar Cells

2016 ◽  
Vol 6 (12) ◽  
pp. 1600198 ◽  
Author(s):  
Yun Seog Lee ◽  
Talia Gershon ◽  
Teodor K. Todorov ◽  
Wei Wang ◽  
Mark T. Winkler ◽  
...  
2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...


2020 ◽  
Vol 217 (18) ◽  
pp. 2000348
Author(s):  
Kortan Öğütman ◽  
Nafis Iqbal ◽  
Geoffrey Gregory ◽  
Mengjie Li ◽  
Michael Haslinger ◽  
...  

2020 ◽  
Vol 1 (7) ◽  
pp. 100112 ◽  
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Chittaranjan Das ◽  
Malgorzata Kot ◽  
Tim Hellmann ◽  
Carolin Wittich ◽  
Eric Mankel ◽  
...  

RSC Advances ◽  
2018 ◽  
Vol 8 (34) ◽  
pp. 19213-19219 ◽  
Author(s):  
Bingye Zhang ◽  
Lu Han ◽  
Shitian Ying ◽  
Yongfeng Li ◽  
Bin Yao

ALD-Al2O3 is used as a passivation layer in a CZTSSe device and optimal device parameters are obtained by precisely controlling Al2O3 thickness.


2011 ◽  
Vol 5 (8) ◽  
pp. 298-300 ◽  
Author(s):  
Dimitri Zielke ◽  
Jan Hendrik Petermann ◽  
Florian Werner ◽  
Boris Veith ◽  
Rolf Brendel ◽  
...  

2014 ◽  
Vol 211 (8) ◽  
pp. 1850-1856 ◽  
Author(s):  
Kwang Seok Jeong ◽  
Hyuk Min Kwon ◽  
Hi Deok Lee ◽  
Ga Won Lee

2018 ◽  
Vol 656 ◽  
pp. 53-60 ◽  
Author(s):  
Christian Reichel ◽  
Markus Reusch ◽  
Stefan Kotula ◽  
Filip Granek ◽  
Armin Richter ◽  
...  

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