Low‐frequency ferroelectric switching studies in
            PVDF
            thin films across Cu or (Ag/Cu)/
            PVDF
            /Cu capacitor structures

AbstractThin films of PbZrO3-Pb(Zn0.33Nb0.67)03, with PZN contents of 8- 12%, were fabricated through the sol-gel spin-on technique. The structural, low frequency capacitive, and polarization reversal characteristics were investigated as a function of composition in this solid solution system. The switching of ferroelectric polarization was tested by a sequence of square wave pulses consisting of two positive pulses followed by two negative pulses. Compositions with higher PZN contents are promising for switching applications; the films were typically characterized by a switched charge of 4-14 μC/cm2, coercive field of around 30 kV/cm, and relative permittivity of 400-800.

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Mechanically Induced Ferroelectric Switching in BaTiO 3 Thin Films

SSRN Electronic Journal ◽

10.2139/ssrn.3467754 ◽

2019 ◽

Author(s):

Bo Wang ◽

Haidong Lu ◽

Chung Wung Bark ◽

Chang-Beom Eom ◽

Alexei Gruverman ◽

...

Keyword(s):

Thin Films ◽

Ferroelectric Switching

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Local Probe Comparison of Ferroelectric Switching Event Statistics in the Creep and Depinning Regimes in Pb(Zr0.2Ti0.8)O3 Thin Films

Physical Review Letters ◽

10.1103/physrevlett.126.117601 ◽

2021 ◽

Vol 126 (11) ◽

Author(s):

Philippe Tückmantel ◽

Iaroslav Gaponenko ◽

Nirvana Caballero ◽

Joshua C. Agar ◽

Lane W. Martin ◽

...

Keyword(s):

Thin Films ◽

Switching Event ◽

Ferroelectric Switching

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Preferential orientation and relaxation behaviors of CaCu3Ti4O12 thin films in a low frequency range

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.02.074 ◽

2017 ◽

Vol 704 ◽

pp. 676-682 ◽

Cited By ~ 6

Author(s):

Kang Sun ◽

Ling-Fang Xu ◽

Cong Mao ◽

Xing Feng ◽

Jia-Yu Liang ◽

...

Keyword(s):

Thin Films ◽

Low Frequency ◽

Preferential Orientation ◽

Frequency Range

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Low-frequency noise and Hall effect measurements on YBa/sub 2/Cu/sub 3/O/sub 7-δ/ thin films

IEEE Transactions on Applied Superconductivity ◽

10.1109/77.402830 ◽

1995 ◽

Vol 5 (2) ◽

pp. 1416-1419 ◽

Cited By ~ 1

Author(s):

A. Jahanzeb ◽

Z. Celik-Butler

Keyword(s):

Thin Films ◽

Hall Effect ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Hall Effect Measurements

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Origin of surface potential change during ferroelectric switching in epitaxial PbTiO3 thin films studied by scanning force microscopy

Applied Physics Letters ◽

10.1063/1.3046786 ◽

2009 ◽

Vol 94 (3) ◽

pp. 032907 ◽

Cited By ~ 78

Author(s):

Yunseok Kim ◽

Changdeuck Bae ◽

Kyunghee Ryu ◽

Hyoungsoo Ko ◽

Yong Kwan Kim ◽

...

Keyword(s):

Thin Films ◽

Surface Potential ◽

Scanning Force Microscopy ◽

Potential Change ◽

Force Microscopy ◽

Scanning Force ◽

Ferroelectric Switching

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Ferroelectric switching dynamics in VDF-TrFE copolymer thin films spin coated on Si substrate

Journal of Applied Physics ◽

10.1063/1.3055411 ◽

2009 ◽

Vol 105 (6) ◽

pp. 061636 ◽

Cited By ~ 31

Author(s):

T. Furukawa ◽

S. Kanai ◽

A. Okada ◽

Y. Takahashi ◽

R. Yamamoto

Keyword(s):

Thin Films ◽

Si Substrate ◽

Switching Dynamics ◽

Ferroelectric Switching

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Disorder-Induced Low-Frequency Raman Band Observed in Deposited MoS2 Films

Applied Spectroscopy ◽

10.1366/000370294774369063 ◽

1994 ◽

Vol 48 (6) ◽

pp. 733-736 ◽

Cited By ~ 41

Author(s):

N. T. McDevitt ◽

J. S. Zabinski ◽

M. S. Donley ◽

J. E. Bultman

Keyword(s):

Crystal Structure ◽

Thin Films ◽

Raman Band ◽

Low Frequency ◽

Pulsed Laser ◽

Laser Deposition ◽

First Order ◽

Order Spectrum ◽

History Of ◽

Frequency Feature

Crystalline disorder in thin films plays an important role in determining their properties. Disorder in the crystal structure of MoS2 films prepared by magnetron sputtering and pulsed laser deposition was evaluated with the use of Raman spectroscopy. The peak positions and bandwidths of the first-order Raman bands, in the region 100 to 500 cm−1, were used as a measure of crystalline order. In addition, a low-frequency feature was observed at 223 cm−1 that is not part of the normal first-order spectrum of a fully crystalline specimen. Data presented here demonstrate that this band is characteristic of crystalline disorder, and its intensity depends on the annealing history of the film. This behavior seems to be analogous to the disorder found in graphite thin films.

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