ChemInform Abstract: VAPOR PHASE EPITAXIAL GROWTH OF GAN ON GAAS, GAP, SI, AND SAPPHIRE SUBSTRATES FROM GABR3 AND NH3
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1973 ◽
Vol 120
(12)
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pp. 1783
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2013 ◽
Vol 43
(4)
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pp. 814-818
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1994 ◽
Vol 139
(3-4)
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pp. 231-237
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2003 ◽
Vol 32
(7)
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pp. 656-660
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Theoretical studies of Si vapor-phase epitaxial growth by Iab initioP molecular-orbital calculations
1990 ◽
Vol 41
(18)
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pp. 12720-12727
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