ChemInform Abstract: VAPOR PHASE EPITAXIAL GROWTH OF GAN ON GAAS, GAP, SI, AND SAPPHIRE SUBSTRATES FROM GABR3 AND NH3

1974 ◽  
Vol 5 (10) ◽  
Author(s):  
YASUO MORIMOTO ◽  
KOSUKE UCHIHO ◽  
SHINTARO USHIO
Nanoscale ◽  
2016 ◽  
Vol 8 (19) ◽  
pp. 10291-10297 ◽  
Author(s):  
Hyoban Lee ◽  
Youngdong Yoo ◽  
Taejoon Kang ◽  
Jiyoung Lee ◽  
Eungwang Kim ◽  
...  

Vertical Ni NWs, inclined Ni NWs, and vertical Ni nanoplates were epitaxially grown on sapphire substrates with a single-crystalline structure in the vapor phase. The morphology and growth direction of Ni nanostructures are determined by Ni seed crystals.


2021 ◽  
Vol 126 ◽  
pp. 105660
Author(s):  
Lifeng Rao ◽  
Xiong Zhang ◽  
Aijie Fan ◽  
Shuai Chen ◽  
Cheng Li ◽  
...  

2013 ◽  
Vol 43 (4) ◽  
pp. 814-818 ◽  
Author(s):  
E. Richter ◽  
S. Fleischmann ◽  
D. Goran ◽  
S. Hagedorn ◽  
W. John ◽  
...  

1994 ◽  
Vol 139 (3-4) ◽  
pp. 231-237 ◽  
Author(s):  
Moo-Sung Kim ◽  
Yong Kim ◽  
Min-Suk Lee ◽  
Young Ju Park ◽  
Seong-Il Kim ◽  
...  

2003 ◽  
Vol 32 (7) ◽  
pp. 656-660 ◽  
Author(s):  
C. D. Maxey ◽  
J. P. Camplin ◽  
I. T. Guilfoy ◽  
J. Gardner ◽  
R. A. Lockett ◽  
...  

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