Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals

Nanoscale ◽  
2016 ◽  
Vol 8 (19) ◽  
pp. 10291-10297 ◽  
Author(s):  
Hyoban Lee ◽  
Youngdong Yoo ◽  
Taejoon Kang ◽  
Jiyoung Lee ◽  
Eungwang Kim ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Crystalline Structure ◽  
Vapor Phase ◽  
Growth Direction ◽  
Single Crystalline ◽  
Seed Crystals ◽  
Sapphire Substrates

Vertical Ni NWs, inclined Ni NWs, and vertical Ni nanoplates were epitaxially grown on sapphire substrates with a single-crystalline structure in the vapor phase. The morphology and growth direction of Ni nanostructures are determined by Ni seed crystals.

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Photovoltaic Phenomena in Thin Film ZnTe-CdSe Heterojunctions

2001 ◽  
Author(s):  
Alexandru Focsha ◽  
Petru Gashin ◽  
Alexei Simashkevich
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Doping Level ◽  
Spectral Dependence ◽  
Wavelength Region

Abstract Thin layer ZnTe-CdSe heterojunctions were produced by vapor phase epitaxial growth of ZnTe and CdSe layers on mica and single-crystal ZnSe substrates. These heterojunctions photosensitivity covers the wavelength region of 0.56–0.85 μm. The shape of photosensitivity spectral dependence of ZnTe-CdSe heterojunction depends on the components thickness and their doping level. Thin layer ZnTe-CdSe epitaxial heterojunction parameters under illumination of 80 mW/cm2 (AM1.5) are: FF=0.53, Uoc=0.72V, Isc=14.8 mA/cm2, efficiency η=7.1%. Thin film polycrystalline ZnTe-CdSe heterojunctions having the efficiency η=4.3%, Uoc=0.54 V, Isc=10.6 mA/cm2 were fabricated by using As or Cu doped ZnTe layers and In doped CdSe layers produced by HWT.

In-plane Molecular Alignment in Thin Films of Pentacene Grown by Solution Casting and Performance of Thin Film Transistors

2007 ◽  
Vol 1003 ◽  
Author(s):  
Takashi Minakata ◽  
Yutaka Nastume
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Crystalline Structure ◽  
Grazing Incidence ◽  
Growth Direction ◽  
Molecular Alignment ◽  
Patterned Substrate ◽  
Polarized Microscopy ◽  
Transmission Electron ◽  
And Performance

AbstractWe have fabricated solution-processed thin films of pentacene by casting solution on a substrate and vaporizing solvent. The films with large oriented platelet domains were obtained by directionally grown condition. Molecular alignment in the directionally grown grains has been studied by several kinds of structural analysis. Oriented domains with the width of several hundreds microns and the length in an order of cm of the films were confirmed by polarized microscopy. In-plane crystalline structure of the domain has been studied by grazing incidence X-ray diffraction (GIXD) and strong anisotropy of in-plane crystalline structure was confirmed. Crystalline growth direction of the film was determined to be b-axis from both transmission electron diffraction and GIXD. Thin films transistors (TFTs) with directionally oriented domains of the films were fabricated on electrode patterned substrate. The observed maximum carrier mobility of 2.7 cm2/Vs was comparable to that of single crystal, which indicated that the quality of the film was almost identical with the single crystal. Correlation between FET performance and growth direction was studied and preferred performance of TFTs with the film grown perpendicularly to the channel was observed.

scholarly journals Доменный эпитаксиальный рост сегнетоэлектрических пленок титаната бария-стронция на сапфире

2018 ◽  
Vol 60 (1) ◽  
pp. 88
Author(s):  
А.В. Тумаркин ◽  
А.А. Одинец
Keyword(s):  
Solid Solution ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Barium Strontium Titanate ◽  
Domain Size ◽  
Component Composition ◽  
Sapphire Substrates ◽  
Integral Number ◽  
Barium Strontium ◽  
Lattice Planes

AbstractA model of the epitaxial growth of crystalline multicomponent films on single-crystal substrates with a domain correspondence is presented using a solid solution of barium strontium titanate on sapphire substrates ( r cut). The domain epitaxial growth suggests the matching of the lattice planes of the film and the substrate having similar structures by comparison of domain multiple of an integral number of the interplanar spacings. Variation of the component composition of the solid solution enables changes in the domain size in the range sufficient for epitaxial growth. This method can be used to project the epitaxial growth of films of various solid solutions on single-crystal substrates.

Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy

2011 ◽  
Vol 50 (12R) ◽  
pp. 125503
Author(s):  
Rui Masuda ◽  
Rie Togashi ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu
Keyword(s):  
Single Crystal ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Sapphire Substrates ◽  
Step Growth ◽  
Zno Single Crystal
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