High Pressure and Chemical Bonding in Materials Chemistry

Materials chemistry under high pressures is an important research area opening new routes for stabilizing novel materials or original structures with different compositions (oxides, oxoborates, nitrides, nitridophosphates, sulfides,. . .).Due to the varieties of chemical compositions and structures involved, high pressure technology is also an important tool for improving the investigations on chemical bonding and consequently the induced physico-chemical properties.Two different approaches can be described: (i) the chemical bond is pre-existing and in such a case, high pressures lead to structural transformations, (ii) the chemical bond does not exist and high pressures are able to help the synthesis of novel materials. In both cases the condensation effect (ΔV < 0 between precursors and the final product) is the general rule. In addition, through the improvement of the reactivity, high pressures can lead to materials that are not reachable through other chemical routes.

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Nature of the electronic states involved in the chemical bonding and superconductivity at high pressure in SnO

JETP Letters ◽

10.1134/s0021364011140098 ◽

2011 ◽

Vol 94 (2) ◽

pp. 142-146 ◽

Cited By ~ 6

Author(s):

J. A. McLeod ◽

A. V. Lukoyanov ◽

E. Z. Kurmaev ◽

L. D. Finkelstein ◽

A. Moewes

Keyword(s):

High Pressure ◽

Chemical Bonding ◽

Electronic States

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Comparative high-pressure study and chemical bonding analysis of Rh3Bi14 and isostructural Rh3Bi12Br2

Journal of Solid State Chemistry ◽

10.1016/j.jssc.2006.12.020 ◽

2007 ◽

Vol 180 (3) ◽

pp. 940-948 ◽

Cited By ~ 16

Author(s):

Q.F. Gu ◽

G. Krauss ◽

Yu. Grin ◽

W. Steurer

Keyword(s):

High Pressure ◽

Chemical Bonding ◽

Bonding Analysis ◽

High Pressure Study

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High-Pressure Synthesis and Chemical Bonding of Barium Trisilicide BaSi3

Materials ◽

10.3390/ma12010145 ◽

2019 ◽

Vol 12 (1) ◽

pp. 145 ◽

Cited By ~ 3

Author(s):

Julia-Maria Hübner ◽

Lev Akselrud ◽

Walter Schnelle ◽

Ulrich Burkhardt ◽

Matej Bobnar ◽

...

Keyword(s):

High Pressure ◽

Chemical Bonding ◽

Ambient Pressure ◽

Covalent Bonding ◽

Partial Structure ◽

Exothermal Reaction ◽

Metallic Behavior ◽

Bonding Analysis ◽

Group I ◽

Pressure Synthesis

BaSi3 is obtained at pressures between 12(2) and 15(2) GPa and temperatures from 800(80) and 1050(105) K applied for one to five hours before quenching. The new trisilicide crystallizes in the space group I 4 ¯ 2m (no. 121) and adopts a unique atomic arrangement which is a distorted variant of the CaGe3 type. At ambient pressure and 570(5) K, the compound decomposes in an exothermal reaction into (hP3)BaSi2 and two amorphous silicon-rich phases. Chemical bonding analysis reveals covalent bonding in the silicon partial structure and polar multicenter interactions between the silicon layers and the barium atoms. The temperature dependence of electrical resistivity and magnetic susceptibility measurements indicate metallic behavior.

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