ChemInform Abstract: Structural, Optical and Electrical Properties of In-Doped Cd2SnO4 Thin Films by Spray Pyrolysis Method.

ChemInform ◽  
2011 ◽  
Vol 42 (17) ◽  
pp. no-no
Author(s):  
R. Kumaravel ◽  
K. Ramamurthi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Method ◽  
Optical And Electrical Properties ◽  
Pyrolysis Method

scholarly journals Structural, optical, and electrical properties of Yb-doped ZnO thin films prepared by spray pyrolysis method

2011 ◽  
Vol 109 (3) ◽  
pp. 033708 ◽  
Author(s):  
I. Soumahoro ◽  
G. Schmerber ◽  
A. Douayar ◽  
S. Colis ◽  
M. Abd-Lefdil ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Zno Thin Films ◽  
Spray Pyrolysis Method ◽  
Optical And Electrical Properties ◽  
Pyrolysis Method ◽  
Doped Zno

scholarly journals Effect of Precursor Concentration on Structural Optical and Electrical Properties of NiO Thin Films Prepared by Spray Pyrolysis

2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Rafia Barir ◽  
Boubaker Benhaoua ◽  
Soufiane Benhamida ◽  
Achour Rahal ◽  
Toufik Sahraoui ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Sample Surface ◽  
Precursor Concentration ◽  
Spray Pyrolysis Method ◽  
Nitrate Hexahydrate ◽  
Optical And Electrical Properties ◽  
Sem Images ◽  
Nano Structure

Undoped nickel oxide (NiO) thin films were deposited on 500°C heated glass substrates using spray pyrolysis method at (0.015–0.1 M) range of precursor. The latter was obtained by decomposition of nickel nitrate hexahydrate in double distilled water. Effect of precursor concentration on structural, optical, and electrical properties of NiO thin films was investigated. X-ray diffraction (XRD) shows the formation of NiO under cubic structure with single diffraction peak along (111) plane at 2θ=37.24°. When precursor concentration reaches 0.1 M, an increment in NiO crystallite size over 37.04 nm was obtained indicating the product nano structure. SEM images reveal that beyond 0.04 M as precursor concentration the substrate becomes completely covered with NiO and thin films exhibit formation of nano agglomerations at the top of the sample surface. Ni-O bonds vibrations modes in the product of films were confirmed by FT-IR analysis. Transparency of the films ranged from 57 to 88% and band gap energy of the films decreases from 3.68 to 3.60 eV with increasing precursor concentration. Electrical properties of the elaborated NiO thin films were correlated to the precursor concentration.

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