BODIPY‐Based Semiconducting Materials for Organic Bulk Heterojunction Photovoltaics and Thin‐Film Transistors

Author(s):  
Dongil Ho ◽  
Resul Ozdemir ◽  
Hyungsug Kim ◽  
Taeshik Earmme ◽  
Hakan Usta ◽  
...  
2009 ◽  
Author(s):  
L. F. Chu ◽  
C. F. Sung ◽  
Y. Z. Lee ◽  
F. C. Chen ◽  
M. C. Wu ◽  
...  

Author(s):  
A. Awomolo ◽  
L. Jiang ◽  
J. Zhang ◽  
G. Jursich ◽  
C.G. Takoudis

This work focuses on dielectric materials in organic thin film transistors. Silicon oxides whose surfaces are modified with hexamethyldisilazane (HMDS) and octyltriethoxylSilane (OTS) are investigated. Organic semiconducting materials are used in the transistors made within the scope of this work. Although the devices made using our procedures did not exhibit satisfactory performance, we explored and understood some chemical and engineering aspects of the relevant dielectric/semiconductor interfaces in organic thin film transistors. Understanding these systems would help with improvements of the electrical properties and performance of such systems when plastic substrates are used at the next stage of the project.


Author(s):  
Yanan Li ◽  
Matthew Dailey ◽  
Patrick Lohr ◽  
Adam Printz

Metal halide perovskites are emerging semiconducting materials with a wide range of applications, including photovoltaics, thin-film transistors, and light-emitting diodes. A key advantage of perovskites over more established semiconductor technologies...


2019 ◽  
Vol 163 ◽  
pp. 725-733 ◽  
Author(s):  
Dongil Ho ◽  
Sureshraju Vegiraju ◽  
Donghee Choi ◽  
Chang-Hui Cho ◽  
Guhyun Kwon ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (17) ◽  
pp. 12686-12691 ◽  
Author(s):  
Joji Ohshita ◽  
Masayuki Miyazaki ◽  
Makoto Nakashima ◽  
Daiki Tanaka ◽  
Yousuke Ooyama ◽  
...  

Donor–acceptor π-conjugated polymers with alternating bi(dithienogermole) and benzo- or pyridinothiadiazole units were prepared and their potential applications to bulk heterojunction-type polymer solar cells and thin film transistors were explored.


2010 ◽  
Vol 5 (2) ◽  
pp. 116-124
Author(s):  
Marco R. Cavallari ◽  
Katia F. Albertin ◽  
Gerson Dos Santos ◽  
Carlos A. S. Ramos ◽  
Inés Pereyra ◽  
...  

We demonstrate that PECVD SiOxNy with good dielectric properties can replace thermally grown SiO2 in Organic Thin-Film Transistors (OTFT) applications. It can be used on ITO-covered glass or even flexible substrates. Poly [2-methoxy-5-(3’,7’-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) is used as the active layer, due to its wide range of applications such as bulk heterojunction solar cells, light-emitting diodes and light-emitting transistors.We show that charge carrier mobility can be at least two times higher for MDMO-PPV on silicon oxynitride than silicon dioxide, μh 1.1x10-4 cm2/Vs. MDMO-PPV spun from solvents such as chloroform and toluene provide comparable TFT performance on SiOxNy. Preliminary studies of devices with hexamethyldisilazane-treated SiO2 demonstrate that performance can be further improved by the choice of a proper surface treatment.


2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


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