Vertical Bridgman Growth of 42°RY-Oriented LiTaO3 Single Crystal

2019 ◽  
Vol 54 (10) ◽  
pp. 1900023
Author(s):  
Eiichiro Nishimura ◽  
Katsuhiko Okano ◽  
Akira Terashima ◽  
Keigo Hoshikawa
Keyword(s):  
Single Crystal ◽  
Bridgman Growth ◽  
Vertical Bridgman

Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

2017 ◽  
Author(s):  
Vasylyna Kopach ◽  
Oleh Kopach ◽  
Larysa Shcherbak ◽  
Petro Fochuk ◽  
Aleksey E. Bolotnikov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bridgman Growth ◽  
Vertical Bridgman

Vertical bridgman growth and characterization of large-diameter single-crystal CdTe

1993 ◽  
Vol 128 (1-4) ◽  
pp. 576-581 ◽  
Author(s):  
Louis G. Casagrande ◽  
Don Di Marzio ◽  
M.B. Lee ◽  
David J. Larson ◽  
Michael Dudley ◽  
...  
Keyword(s):  
Single Crystal ◽  
Large Diameter ◽  
Bridgman Growth ◽  
Vertical Bridgman

Bridgman growth and electrical properties of Nd-doped PMN-PT single crystal with ultrahigh piezoelectricity

CrystEngComm ◽  
2022 ◽  
Author(s):  
Ziyun Chen ◽  
Tingyu Deng ◽  
Rui Chen ◽  
Di Lin ◽  
Wenning Di ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Crystalline Phase ◽  
Perovskite Structure ◽  
Polycrystalline Material ◽  
Nominal Composition ◽  
Bridgman Growth ◽  
Vertical Bridgman ◽  
Bridgman Process

Using the polycrystalline material with a nominal composition of Nd0.01Pb0.985[(Mg1/3Nb2/3)0.70Ti0.30]O3, a Nd-doped PMN-PT single crystal has been grown successfully by vertical Bridgman process. The perovskite structure and the crystalline phase...

scholarly journals Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

2017 ◽  
Author(s):  
A. Bolotnikov ◽  
V. Kopach ◽  
O. Kopach ◽  
L. Shcherbak ◽  
P. Fochuk ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bridgman Growth ◽  
Vertical Bridgman

A Modified Vertical Bridgman Method for Growth of GaSe Single Crystal

2014 ◽  
Author(s):  
Chang-Bao HUANG ◽  
You-Bao NI ◽  
Hai-Xin WU ◽  
Zhen-You WANG ◽  
Xu-Dong CHENG ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bridgman Method ◽  
Vertical Bridgman Method ◽  
Vertical Bridgman

The Characteristic of the La3Ga5SiO14 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere

2006 ◽  
Vol 510-511 ◽  
pp. 842-845 ◽  
Author(s):  
Noriko Bamba ◽  
Kentaro Kato ◽  
Toshinori Taishi ◽  
Takayuki Hayashi ◽  
Keigo Hoshikawa ◽  
...  
Keyword(s):  
Melting Point ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Color Change ◽  
Piezoelectric Materials ◽  
Lead Free ◽  
Piezoelectric Constant ◽  
Interstitial Oxygen ◽  
Vertical Bridgman

Langasite (La3Ga5SiO14: denoted by LGS) single crystal is one of the lead free piezoelectric materials with high piezoelectricity that is maintained up to its melting point (1470°C). Although LGS single crystals have usually been grown by Czochralski (CZ) method in oxygen contained atmosphere to prevent evaporation of Ga, they were grown by the vertical Bridgman (VB) method in Ar atmosphere without oxygen, and their properties were evaluated in this work. Transparent and colorless LGS single crystals were successfully obtained without Ga evaporation by the VB method in Ar atmosphere, and their resistivity at room temperature was much higher than that grown by conventional CZ method. Piezoelectric constant d11 of the crystal grown by the VB method was 6 x 10-12 C/N, which was close to that of the crystal grown by CZ method. The colorless transparent LGS single crystal turned to orange and its resistivity decreased by annealing in air. Since an orange-colored transparent LGS single crystal has been grown by conventional CZ method, this indicates that color change and the resistivity decrease of LGS crystal is caused by extra interstitial oxygen atoms in the crystal.

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