Bridgman growth and electrical properties of Nd-doped PMN-PT single crystal with ultrahigh piezoelectricity

Using the polycrystalline material with a nominal composition of Nd0.01Pb0.985[(Mg1/3Nb2/3)0.70Ti0.30]O3, a Nd-doped PMN-PT single crystal has been grown successfully by vertical Bridgman process. The perovskite structure and the crystalline phase...

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Vertical Bridgman growth and characterization of Cd0.95-xMnxZn0.05Te (x=0.20, 0.30) single-crystal ingots

Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIX ◽

10.1117/12.2271767 ◽

2017 ◽

Author(s):

Vasylyna Kopach ◽

Oleh Kopach ◽

Larysa Shcherbak ◽

Petro Fochuk ◽

Aleksey E. Bolotnikov ◽

...

Keyword(s):

Single Crystal ◽

Bridgman Growth ◽

Vertical Bridgman

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Vertical bridgman growth and characterization of large-diameter single-crystal CdTe

Journal of Crystal Growth ◽

10.1016/s0022-0248(07)80003-0 ◽

1993 ◽

Vol 128 (1-4) ◽

pp. 576-581 ◽

Cited By ~ 24

Author(s):

Louis G. Casagrande ◽

Don Di Marzio ◽

M.B. Lee ◽

David J. Larson ◽

Michael Dudley ◽

...

Keyword(s):

Single Crystal ◽

Large Diameter ◽

Bridgman Growth ◽

Vertical Bridgman

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Vertical Bridgman growth and annealing effect of Bi doped ZnSe single crystal

physica status solidi (c) ◽

10.1002/pssc.200405108 ◽

2004 ◽

Vol 1 (10) ◽

pp. 2495-2499 ◽

Cited By ~ 1

Author(s):

C. B. Oh ◽

J. F. Wang ◽

M. Isshiki

Keyword(s):

Single Crystal ◽

Annealing Effect ◽

Bridgman Growth ◽

Vertical Bridgman ◽

Znse Single Crystal

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Vertical Bridgman Growth of 42°RY-Oriented LiTaO3 Single Crystal

Crystal Research and Technology ◽

10.1002/crat.201900023 ◽

2019 ◽

Vol 54 (10) ◽

pp. 1900023

Author(s):

Eiichiro Nishimura ◽

Katsuhiko Okano ◽

Akira Terashima ◽

Keigo Hoshikawa

Keyword(s):

Single Crystal ◽

Bridgman Growth ◽

Vertical Bridgman

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Bridgman Growth and Photoelectronic Property of Relaxor-Based Ferroelectric Single Crystal Pb(Sm1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3

Crystals ◽

10.3390/cryst11040402 ◽

2021 ◽

Vol 11 (4) ◽

pp. 402

Author(s):

Fan Liao ◽

Yan Zhao ◽

Ziyun Chen ◽

Yanqing Zheng ◽

Hongbing Chen

Keyword(s):

Single Crystal ◽

Single Crystals ◽

Direct Current ◽

Optical Transmittance ◽

Alternating Current ◽

Nominal Composition ◽

Structure Changes ◽

Current Voltage ◽

Vertical Bridgman ◽

Ferroelectric Single Crystal

A relaxor-based ferroelectric single crystal with the nominal composition of xPb(Sm0.5Nb0.5)O3-(0.7‒x) Pb(Mg1/3Nb1/3)O3-0.3PbTiO3 (x = 0.01, 0.02, and 0.03) was grown by the vertical Bridgman process. The electrical properties and the ferroelectric domains, as well as the luminescent characteristics of the single crystals, were investigated systematically. The piezoelectric coefficient d33 of the single crystals are slightly higher than that of the undoped PMN-PT single crystal under direct current polarization, while the crystal wafers gain a much higher d33 value upon being polarized with alternating current voltage. The single crystals possess a decreased phase transition temperature of around 60 °C and a decreased Curie temperature of 92~116 °C compared with the undoped PMN-PT single crystal. The crystal wafers polarized with alternating current voltage exhibited a desirable optical transmittance, which is associated with the domain structure changes inside the crystal medium. The domain density of the crystal wafers under alternating current polarization was significantly decreased compared with the direct current polarized crystal wafers. The luminescent spectra of the crystal wafers exhibit the typical emission peaks corresponding to the characteristic transition of Sm3+ ions in the crystal lattice.

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