scholarly journals Exploiting Novel Unfused‐Ring Acceptor for Efficient Organic Solar Cells with Record Open‐Circuit Voltage and Fill Factor

ChemSusChem ◽  
2021 ◽  
Author(s):  
Lie Chen ◽  
Zuoji Liu ◽  
Qilong Mao ◽  
Jing Wang ◽  
Feiyan Wu ◽  
...  
2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Chao Zhao ◽  
Cindy G. Tang ◽  
Zong-Long Seah ◽  
Qi-Mian Koh ◽  
Lay-Lay Chua ◽  
...  

AbstractAs electrode work function rises or falls sufficiently, the organic semiconductor/electrode contact reaches Fermi-level pinning, and then, few tenths of an electron-volt later, Ohmic transition. For organic solar cells, the resultant flattening of open-circuit voltage (Voc) and fill factor (FF) leads to a ‘plateau’ that maximizes power conversion efficiency (PCE). Here, we demonstrate this plateau in fact tilts slightly upwards. Thus, further driving of the electrode work function can continue to improve Voc and FF, albeit slowly. The first effect arises from the coercion of Fermi level up the semiconductor density-of-states in the case of ‘soft’ Fermi pinning, raising cell built-in potential. The second effect arises from the contact-induced enhancement of majority-carrier mobility. We exemplify these using PBDTTPD:PCBM solar cells, where PBDTTPD is a prototypal face-stacked semiconductor, and where work function of the hole collection layer is systematically ‘tuned’ from onset of Fermi-level pinning, through Ohmic transition, and well into the Ohmic regime.


2014 ◽  
Vol 2 (15) ◽  
pp. 5450-5454 ◽  
Author(s):  
Hyun-Sub Shim ◽  
Jung-Hung Chang ◽  
Seung-Jun Yoo ◽  
Chih-I. Wu ◽  
Jang-Joo Kim

The electronic structure of an interconnection unit affects not only the open circuit voltage but also the fill factor in tandem organic solar cells.


Author(s):  
Xiaosha Wang ◽  
Honggang Chen ◽  
Jun Yuan ◽  
Qingya Wei ◽  
Jing Li ◽  
...  

Three polymer donors named Qx-8F, Qx-10F, and Qx-12F, with similar chemical structures, was synthesized. The energy level of these donors is manipulated by precisely controlling the fluorination sites. We demonstrate...


2014 ◽  
Vol 105 (8) ◽  
pp. 083304 ◽  
Author(s):  
Yuelin Peng ◽  
Lushuai Zhang ◽  
Trisha L. Andrew

2019 ◽  
Vol 12 (03) ◽  
pp. 1950022 ◽  
Author(s):  
Yuming Liang ◽  
Ping Deng ◽  
Zhongtao Wang ◽  
Zhiyong Guo ◽  
Yanlian Lei

Nonfullerene electron acceptor materials have gained enormous attention due to their potential as replacements of fullerene electron acceptors in bulk heterojunction organic solar cells. A novel thiophene bridged selenophene-containing perylene diimide acceptor PDISe-T has been synthesized and applied as an acceptor in nonfullerene organic photovoltaic cells. The inverted organic photovoltaic (OPV) solar cells based on PDISe-T:PBT7-Th (acceptor:donor) blends give a power conversion efficiency (PCE) value of 2.53% with an open-circuit voltage ([Formula: see text] of 0.92[Formula: see text]V, a [Formula: see text] of 6.55[Formula: see text]mA[Formula: see text]cm[Formula: see text], and a fill factor (FF) of 0.42.


2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.


2019 ◽  
Vol 115 (15) ◽  
pp. 153301 ◽  
Author(s):  
Seiichiro Izawa ◽  
Naoto Shintaku ◽  
Mitsuru Kikuchi ◽  
Masahiro Hiramoto

RSC Advances ◽  
2015 ◽  
Vol 5 (79) ◽  
pp. 64724-64730 ◽  
Author(s):  
Derya Baran ◽  
Sule Erten-Ela ◽  
Andreas Kratzer ◽  
Tayebeh Ameri ◽  
Christoph J. Brabec ◽  
...  

In this work, a bis-adduct C60 derivative was facilely synthesized using an alkyl solubilizing group. This semiconductor offers a higher LUMO level compared to PCBM, which resulted in a significantly enhanced Voc of 0.73 V in organic solar cells.


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