An analytical model of small-signal parameters for GaAs/AlGaAs inverted high electron mobility transistors

Microelectronics Journal ◽

10.1016/s0026-2692(00)00110-5 ◽

2001 ◽

Vol 32 (1) ◽

pp. 85-88 ◽

Author(s):

K.-W. Liu ◽

A.F.M. Anwar

Keyword(s):

Analytical Model ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Signal Parameters

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The small-signal parameters and noise characterization for inverted GaAs/AlGaAs high electron mobility transistors

2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) ◽

10.1109/icmel.2000.840541 ◽

2002 ◽

Author(s):

Kuo-Wei Liu ◽

A.F.M. Anwar

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Signal Parameters ◽

Noise Characterization

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Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22562 ◽

2021 ◽

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Jialin Cai ◽

Jun Liu ◽

Fadhel M. Ghannouchi

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Parameter Extraction ◽

Extraction Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors

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A DC and small signal model for high electron mobility transistors

[1993] Proceedings of the Tenth Biennial University/Government/Industry Microelectronics Symposium ◽

10.1109/ugim.1993.297017 ◽

2002 ◽

Author(s):

H. Ahn ◽

M. El Nokali

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Signal Model ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Small Signal Model

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An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2648 ◽

2019 ◽

Vol 32 (6) ◽

Author(s):

Mohammad N. Khan ◽

Umer F. Ahmed ◽

Muhammad M. Ahmed ◽

Saif Rehman

Keyword(s):

Analytical Model ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors

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High-frequency small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)

IEEE Transactions on Electron Devices ◽

10.1109/16.641380 ◽

1997 ◽

Vol 44 (11) ◽

pp. 2038-2040 ◽

Author(s):

K.J. Chen ◽

K. Maezawa ◽

M. Yamamoto

Keyword(s):

Electron Mobility ◽

High Frequency ◽

Resonant Tunneling ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Large Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Signal Characteristics

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Compact analytical model for single gate AlInSb/InSb high electron mobility transistors

Journal of Semiconductors ◽

10.1088/1674-4926/35/11/114003 ◽

2014 ◽

Vol 35 (11) ◽

pp. 114003 ◽

Author(s):

S. Theodore Chandra ◽

N. B. Balamurugan ◽

G. Subalakshmi ◽

T. Shalini ◽

G. Lakshmi Priya

Keyword(s):

Analytical Model ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.3694768 ◽

2012 ◽

Vol 100 (11) ◽

pp. 113509 ◽

Author(s):

M. Ťapajna ◽

J. Kuzmík

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Analytical Model for the Threshold Voltage of ${p}$ -(Al)GaN High-Electron-Mobility Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2773269 ◽

2018 ◽

Vol 65 (1) ◽

pp. 79-86 ◽

Author(s):

Benoit Bakeroot ◽

Arno Stockman ◽

Niels Posthuma ◽

Steve Stoffels ◽

Stefaan Decoutere

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2015.4236 ◽

2015 ◽

Vol 12 (10) ◽

pp. 3547-3555 ◽

Author(s):

Li Shen ◽

Bo Chen ◽

Ling Sun ◽

Jianjun Gao

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Device Modeling ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Noise Modeling ◽

Electron Mobility Transistors

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Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-µm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.1914 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 1914-1918 ◽

Author(s):

Bok-Hyung Lee ◽

Sam-Dong Kim ◽

Jin-Koo Rhee

Keyword(s):

Electron Mobility ◽

Signal Analysis ◽

High Electron Mobility Transistors ◽

High Electron ◽

Small Signal ◽

Maximum Frequency ◽

High Electron Mobility ◽

Small Signal Analysis ◽

Electron Mobility Transistors ◽

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