A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors
2013 ◽
Vol 52
(8S)
◽
pp. 08JN08
◽
2019 ◽
pp. 391-402
◽
2020 ◽
Vol 67
(5)
◽
pp. 1939-1945
◽
2019 ◽
Vol 58
(SC)
◽
pp. SCCD21
◽