A power amplifier with bandwidth expansion and linearity enhancement in 130 nm complementary metal‐oxide‐semiconductor process

2021 ◽  
Author(s):  
Cheng Cao ◽  
Jiangfan Liu ◽  
Yubing Li ◽  
Tao Tan ◽  
Zemeng Huang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Power Amplifier ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Bandwidth Expansion ◽  
Semiconductor Process

A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process

2012 ◽  
Vol 51 (2) ◽  
pp. 02BC01 ◽  
Author(s):  
Hamid Kiumarsi ◽  
Yutaka Mizuochi ◽  
Hiroyuki Ito ◽  
Noboru Ishihara ◽  
Kazuya Masu
Keyword(s):  
Metal Oxide ◽  
Power Amplifier ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Process

A Three-Stage Inverter-Based Stacked Power Amplifier in 65 nm Complementary Metal Oxide Semiconductor Process

2012 ◽  
Vol 51 (2S) ◽  
pp. 02BC01 ◽  
Author(s):  
Hamid Kiumarsi ◽  
Yutaka Mizuochi ◽  
Hiroyuki Ito ◽  
Noboru Ishihara ◽  
Kazuya Masu
Keyword(s):  
Metal Oxide ◽  
Power Amplifier ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Process

A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction

2017 ◽  
Vol 9 (15) ◽  
pp. 13262-13268 ◽  
Author(s):  
Fabian Ambriz-Vargas ◽  
Gitanjali Kolhatkar ◽  
Maxime Broyer ◽  
Azza Hadj-Youssef ◽  
Rafik Nouar ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Tunnel Junction ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Ferroelectric Tunnel Junction ◽  
Semiconductor Process

Magnetotransistors sensitive to a magnetic field applied in two different directions

1991 ◽  
Vol 69 (3-4) ◽  
pp. 170-173
Author(s):  
M. Doan ◽  
Lj. Ristic
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Basic Principle ◽  
Magnetic Induction ◽  
Linear Response ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Base Region ◽  
Semiconductor Process

A lateral magnetotransistor that is sensitive to a magnetic field applied either parallel or perpendicular to the chip's surface is reported. It is fabricated using the standard complementary metal oxide semiconductor process. The deflection of the carriers in the base region is considered as the basic principle of operation. The device shows a linear response to a magnetic field in both directions. The minimum magnetic induction to be detected is in the order of 10 μT at f = 1 kHz.

Formation of cobalt silicide spikes in 0.18 μm complementary metal oxide semiconductor process

2001 ◽  
Vol 78 (20) ◽  
pp. 3091-3093 ◽  
Author(s):  
J. Y. Dai ◽  
Z. R. Guo ◽  
S. F. Tee ◽  
C. L. Tay ◽  
Eddie Er ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cobalt Silicide ◽  
Semiconductor Process

Fabrication of Submicron IrO2Nanowire Array Biosensor Platform by Conventional Complementary Metal–Oxide–Semiconductor Process

2008 ◽  
Vol 47 (2) ◽  
pp. 1147-1151 ◽  
Author(s):  
Fengyan Zhang ◽  
Bruce Ulrich ◽  
Ravi K. Reddy ◽  
Vinu L. Venkatraman ◽  
Shalini Prasad ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Array Biosensor ◽  
Semiconductor Process
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