Crystallization Double-Layer Magneto-Active Films for Magnetophotonics

Magneto-optics, magnetophotonics and magnetoplasmonics stay at the edge of scientific interests last years due to their unique features to manage the light and electromagnet field. Bi-substituted iron garnet (Bi:IG) is one of most promising magneto-optical material for these applications in order to its high efficiency in visible and infrared spectra. The possibility to integrate Bi:IG films to silicon semiconductor process leads to creation nanoscale hight performance magneto-optical devices. Bi:IG structures of different composition might be deposited by vacuum deposition on different substrates. The investigation of crystallization process of Bi:IG double-layer films at a different process parameter on gadolinium gallium garnet and fused quartz substrates allowing to determine dependences and suggestions for integration Bi:IG to semiconductor process or multicomponent optical nanostructures.

Ultra-Low Temperature Chillers for Semiconductor Manufacturing Process

The growth of the semiconductor market and advancement of manufacturing technology have led to an increase in wafer size and highly integrated semiconductor devices. The temperature of the supplied cooling medium from the chiller that removes the heat produced in the semiconductor manufacturing process is required to be at a lower level because of the high integration. The Joule-Thomson cooling cycle, which uses a mixed refrigerant (MR) to produce the cooling medium at a level of −100°C required for the semiconductor process, has recently gained attention. When a MR is used, the chiller’s performance is heavily influenced by the composition and proportions of the refrigerant charged to the chiller system. Therefore, this paper introduces a cooling cycle that uses an MR to achieve the required low temperature of −100°C in the semiconductor manufacturing process and provides the results of simple experiments to determine the effects of different MR compositions.

Wafer Thinning Process and Its Critical Manufacturability Requirements

Wafer Thinning as a major semiconductor process steps to attain miniaturization of Integrated Circuit or IC. Wafer back grinding up to 70 µm thickness is considered critical due to its fragility. The paper will discuss the definition and establishment of critical equipment check items to lessen the risk of breakage. Equipment covered was an inline wafer back grinding and wafer mounting. The research has used a qualitative approach by applying process mapping to identify critical sub-process steps. Thereafter, the results show the establishment of critical equipment subprocess steps such as grinding, lamination and de taping. Foreign material and alignment control are considered areas for improvement and have incorporated the control at the equipment preventive maintenance. After all the evaluation, wafer thinning process was successfully released and proliferated from development to manufacturing.