Design of evolutionary cubic spline intelligent solver for nonlinear Painlevé-I transcendent

In this research paper, an innovative bio-inspired algorithm based on evolutionary cubic splines method (CSM) has been utilized to estimate the numerical results of nonlinear ordinary differential equation Painlevé-I. The computational mechanism is used to support the proposed technique CSM and optimize the obtained results with global search technique genetic algorithms (GAs) hybridized with sequential quadratic programming (SQP) for quick refinement. Painlevé-I is solved by the proposed technique CSM-GASQP. In this process, variation of splines is implemented for various scenarios. The CSM-GASQP produces an interpolated function that is continuous upto its second derivative. Also, splines proved to be stable than a single polynomial fitted to all points, and reduce wiggles between the tabulated points. This method provides a reliable and excellent procedure for adaptation of unknown coefficients of splines by searching globally exploiting the performance of GA-SQP algorithms. The convergence, exactness and accuracy of the proposed scheme are examined through the statistical analysis for the several independent runs.

Leakage Mitigation in NW FET using Negative Schottky Junction Drain and its Process Variation Analysis

In this work, a Schottky junction on the drain side employing low workfunction (WF) metal is proposed as a method to suppress the OFF-state leakage in nanowire (NW) field-effect transistor (FET). Instead of a highly n+ doped drain, low WF metal with negative electron Schottky-barrier height (SBH) as a drain minimizes the lateral band-to-band tunneling (L-BTBT) considerably. L-BTBT is the movement of carriers (holes) from the drain conduction band (CB) into the channel valence band (VB) during the OFF-state. Impact of varying WF at channel-drain junction on the device characteristics is studied. It is observed that SBH60 eV is required to mitigate L-BTBT compared to the conventionally-doped and junctionless (JL) NW counterpart. Furthermore, unlike L-BTBT, leakage in NW Schottky-drain (SD) comprises of holes tunneling through the SB from the metal drain into the channel and termed as the lateral SB tunneling (L-SBT). In contrast to JL NW FET, the process variation immunity (varying channel doping, NCh and NW diameter, dNW ) and the ON-state current of the proposed device is not compromised at the expense of lower OFF-state LSBT. Instead, the device is less susceptible to process variations and retains the ON-state performance of the NW MOSFET. For a ±20% change in NCh, ∆IOF F /IOF F of 7% compared to 97% in NW JL FET is observed.