Impact of CdTe surface composition on doping and device performance in close Space sublimation deposited CdTe solar cells

Author(s):  
J. D. Major ◽  
Y. Y. Proskuryakov ◽  
K. Durose
2012 ◽  
Vol 1432 ◽  
Author(s):  
Jonathan D. Major ◽  
Leon Bowen ◽  
Robert E. Treharne ◽  
Ken Durose

ABSTRACTTwo issues relating to the determination of junction position in thin film CdTe solar cells have been investigated. Firstly, the use of a focussed ion beam (FIB) milling as a method of sample preparation for electron beam induced current (EBIC) analysis is demonstrated. It is superior to fracturing methods. High quality secondary electron and combined secondary electron/EBIC images are presented and interpreted for solar cells with CdTe layers deposited by both close space sublimation (CSS) or RF sputtering. Secondly, it was shown that in an RF-sputtered CdTe device, while the photovoltaic junction was buried ~1.1 μm from the metallurgical interface, the shape of the external quantum efficiency (EQE) curve did not indicate the presence of a buried homo-junction. SCAPS modelling was used to verify that EQE curve shapes are not sensitive to junctions buried < 1.5μm from the CdTe/CdS interface.


2016 ◽  
Vol 34 (2) ◽  
pp. 021202 ◽  
Author(s):  
Drew E. Swanson ◽  
Jason M. Kephart ◽  
Pavel S. Kobyakov ◽  
Kevin Walters ◽  
Kevan C. Cameron ◽  
...  

2013 ◽  
Vol 62 (18) ◽  
pp. 188801
Author(s):  
Zhao Shou-Ren ◽  
Huang Zhi-Peng ◽  
Sun Lei ◽  
Sun Peng-Chao ◽  
Zhang Chuan-Jun ◽  
...  

MRS Advances ◽  
2019 ◽  
Vol 4 (16) ◽  
pp. 913-919 ◽  
Author(s):  
Fadhil K. Alfadhili ◽  
Adam B. Phillips ◽  
Geethika K. Liyanage ◽  
Jacob M. Gibbs ◽  
Manoj K. Jamarkattel ◽  
...  

ABSTRACTFormation of a low barrier back contact plays a critical role in improving the photoconversion efficiency of the CdTe solar cells. Incorporating a buffer layer to minimize the band bending at the back of the CdTe device can significantly lower the barrier for the hole current, improving open circuit voltage (VOC) and the fill factor. Over the past years, researchers have incorporated the both ZnTe and Te as buffer layers to improve CdTe device performance. Here we compare device performance using these two materials as buffer layers at the back of CdTe devices. We show that using Te in contact to CdTe results in higher performance than using ZnTe in contact to the CdTe. Low temperature current density-voltage measurements show that Te results is a lower barrier with CdTe than ZnTe, indicating that Te has better band alignment, resulting in less downward bending in the CdTe at the back interface, than ZnTe does.


2011 ◽  
Vol 110 (6) ◽  
pp. 064508 ◽  
Author(s):  
Judith Schaffner ◽  
Markus Motzko ◽  
Alexander Tueschen ◽  
Andreas Swirschuk ◽  
Hermann-Josef Schimper ◽  
...  

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