scholarly journals Record 1.0 V open-circuit voltage in wide band gap chalcopyrite solar cells

2017 ◽  
Vol 25 (9) ◽  
pp. 755-763 ◽  
Author(s):  
Fredrik Larsson ◽  
Nina Shariati Nilsson ◽  
Jan Keller ◽  
Christopher Frisk ◽  
Volodymyr Kosyak ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Open Circuit Voltage ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap

Tailoring the Open-Circuit Voltage Deficit of Wide-Band-Gap Perovskite Solar Cells Using Alkyl Chain-Substituted Fullerene Derivatives

2018 ◽  
Vol 10 (26) ◽  
pp. 22074-22082 ◽  
Author(s):  
Dhruba B. Khadka ◽  
Yasuhiro Shirai ◽  
Masatoshi Yanagida ◽  
Takeshi Noda ◽  
Kenjiro Miyano
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Open Circuit Voltage ◽  
Alkyl Chain ◽  
Perovskite Solar Cells ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
Fullerene Derivatives

Anthracene-Containing Wide-Band-Gap Conjugated Polymers for High-Open-Circuit-Voltage Polymer Solar Cells

2013 ◽  
Vol 34 (14) ◽  
pp. 1163-1168 ◽  
Author(s):  
Xue Gong ◽  
Cuihong Li ◽  
Zhen Lu ◽  
Guangwu Li ◽  
Qiang Mei ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conjugated Polymers ◽  
Band Gap ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap

scholarly journals Benefits of Low Electron-Affinity Material as the N-Type Layer for Cu(In,Ga)S2 Solar Cell

Energies ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 4
Author(s):  
Dwinanri Egyna ◽  
Kazuyoshi Nakada ◽  
Akira Yamada
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Simulation Model ◽  
Band Gap ◽  
Electron Affinity ◽  
Open Circuit Voltage ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
Type Layer

Despite the potential in single- and multi-junction solar cells application, research into the wide band gap CuIn1−xGax(Se1−ySy)2 or CIG(SSe)2 solar cell material, with Eg≥1.5eV, has yet to be extensively performed to date. In this work, we conducted a numerical study into the role of the n-type layers in CIG(SSe)2 heterojunction solar cells, specifically concerning the maximum open-circuit voltage of the devices. In the first part of the study, we derived a new ideal open-circuit voltage equation for a thin-film heterojunction solar cell by taking into account the current contribution from the depletion region. The accuracy of the new equation was validated through a simulation model in the second part of the study. Another simulation model was also used to clarify the design rules of the n-type layer in a wide band gap CIG(SSe)2 solar cell. Our work stressed the importance of a positive conduction band offset on the n-/p-type interface, through the use of a low electron affinity n-type material for a solar cell with a high open-circuit voltage . Through a precise selection of the window layer material, a buffer-free CIG(SSe)2 design is sufficient to fulfill such conditions. We also proposed the specific roles of the n-type layer, i.e., as a passivation layer and selective electron contact, in the operation of CIGS2 solar cells.

Origin of Open Circuit Voltage in wide band gap absorbers of all inorganic Cesium Perovskite Solar Cells

2017 ◽  
Author(s):  
Teresa S. Ripolles ◽  
Chi Huey Ng ◽  
Kengo Hamada ◽  
Siow Hwa Teo ◽  
Hong Ngee Lim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap

Tuning of the open-circuit voltage by wide band-gap absorber and doped layers in thin film silicon solar cells

2015 ◽  
Vol 9 (8) ◽  
pp. 453-456 ◽  
Author(s):  
Shuo Wang ◽  
Vladimir Smirnov ◽  
Tao Chen ◽  
Xiaodan Zhang ◽  
Shaozhen Xiong ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Open Circuit Voltage ◽  
Wide Band ◽  
Open Circuit ◽  
Silicon Solar Cells ◽  
Wide Band Gap ◽  
Thin Film Silicon

Quinoxaline-Based Wide Band Gap Polymers for Efficient Nonfullerene Organic Solar Cells with Large Open-Circuit Voltages

2018 ◽  
Vol 10 (27) ◽  
pp. 23235-23246 ◽  
Author(s):  
Jie Yang ◽  
Mohammad Afsar Uddin ◽  
Yumin Tang ◽  
Yulun Wang ◽  
Yang Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Organic Solar Cells ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
Open Circuit Voltages

Novel wide band gap polymers based on dithienobenzoxadiazole for polymer solar cells with high open circuit voltages over 1 V

RSC Advances ◽  
2016 ◽  
Vol 6 (56) ◽  
pp. 51419-51425 ◽  
Author(s):  
Dakang Ding ◽  
Jiuxing Wang ◽  
Weiye Chen ◽  
Meng Qiu ◽  
Junzhen Ren ◽  
...  
Keyword(s):  
Solar Cells ◽  
Oxygen Atom ◽  
Band Gap ◽  
Polymer Solar Cells ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
Open Circuit Voltages

Just by replacing sulfur with oxygen atom, the Voc of PBDT-fDTBO based PSCs is 0.2 V higher than PBDT-fDTBT based devices.

Triple-halide wide–band gap perovskites with suppressed phase segregation for efficient tandems

Science ◽  
2020 ◽  
Vol 367 (6482) ◽  
pp. 1097-1104 ◽  
Author(s):  
Jixian Xu ◽  
Caleb C. Boyd ◽  
Zhengshan J. Yu ◽  
Axel F. Palmstrom ◽  
Daniel J. Witter ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Low Cost ◽  
Perovskite Solar Cells ◽  
Phase Segregation ◽  
Wide Band ◽  
Charge Carrier Mobility ◽  
Lattice Parameter ◽  
Open Circuit ◽  
Wide Band Gap

Wide–band gap metal halide perovskites are promising semiconductors to pair with silicon in tandem solar cells to pursue the goal of achieving power conversion efficiency (PCE) greater than 30% at low cost. However, wide–band gap perovskite solar cells have been fundamentally limited by photoinduced phase segregation and low open-circuit voltage. We report efficient 1.67–electron volt wide–band gap perovskite top cells using triple-halide alloys (chlorine, bromine, iodine) to tailor the band gap and stabilize the semiconductor under illumination. We show a factor of 2 increase in photocarrier lifetime and charge-carrier mobility that resulted from enhancing the solubility of chlorine by replacing some of the iodine with bromine to shrink the lattice parameter. We observed a suppression of light-induced phase segregation in films even at 100-sun illumination intensity and less than 4% degradation in semitransparent top cells after 1000 hours of maximum power point (MPP) operation at 60°C. By integrating these top cells with silicon bottom cells, we achieved a PCE of 27% in two-terminal monolithic tandems with an area of 1 square centimeter.

Fabrication of p-i-n solar cells utilizing ZnInON by RF magnetron sputtering

2015 ◽  
Vol 1741 ◽  
Author(s):  
Koichi Matsushima ◽  
Ryota Shimizu ◽  
Tomoaki Ide ◽  
Daisuke Yamashita ◽  
Hyunwoong Seo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Band Gap ◽  
High Performance ◽  
Wide Band ◽  
Open Circuit ◽  
Crystal Defects ◽  
Solar Simulator ◽  
Wide Band Gap ◽  
Solar Cell Performance

ABSTRACTWe succeeded in photovoltaic power generation of p-i-n solar cells utilizing epitaxial ZnInON film with a wide band gap of 3.1 eV as the intrinsic layer, suitable for a top cell of tandem solar cells. The solar cell shows a high open circuit voltage (Voc) of 1.68 V under solar simulator light irradiation of 3.2 mW/cm2. The solar cell performance becomes worse under 100 mW/cm2, which is mainly attributed to the leakage current caused by crystal defects and grain boundaries. X-ray diffraction analysis reveals that the ZnInON film has rather large tilt and twist angles and a high dislocation density of 7.62×1010 cm-2. Such low crystallinity is a bottleneck for high performance of the solar cells. Our results demonstrate a potential of epitaxial ZnInON films as an intrinsic layer of wide band gap p-i-n solar cells with a high Voc.

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