Tailoring the Open-Circuit Voltage Deficit of Wide-Band-Gap Perovskite Solar Cells Using Alkyl Chain-Substituted Fullerene Derivatives

2018 ◽  
Vol 10 (26) ◽  
pp. 22074-22082 ◽  
Author(s):  
Dhruba B. Khadka ◽  
Yasuhiro Shirai ◽  
Masatoshi Yanagida ◽  
Takeshi Noda ◽  
Kenjiro Miyano
Author(s):  
Teresa S. Ripolles ◽  
Chi Huey Ng ◽  
Kengo Hamada ◽  
Siow Hwa Teo ◽  
Hong Ngee Lim ◽  
...  

2017 ◽  
Vol 25 (9) ◽  
pp. 755-763 ◽  
Author(s):  
Fredrik Larsson ◽  
Nina Shariati Nilsson ◽  
Jan Keller ◽  
Christopher Frisk ◽  
Volodymyr Kosyak ◽  
...  

2013 ◽  
Vol 34 (14) ◽  
pp. 1163-1168 ◽  
Author(s):  
Xue Gong ◽  
Cuihong Li ◽  
Zhen Lu ◽  
Guangwu Li ◽  
Qiang Mei ◽  
...  

Energies ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 4
Author(s):  
Dwinanri Egyna ◽  
Kazuyoshi Nakada ◽  
Akira Yamada

Despite the potential in single- and multi-junction solar cells application, research into the wide band gap CuIn1−xGax(Se1−ySy)2 or CIG(SSe)2 solar cell material, with Eg≥1.5eV, has yet to be extensively performed to date. In this work, we conducted a numerical study into the role of the n-type layers in CIG(SSe)2 heterojunction solar cells, specifically concerning the maximum open-circuit voltage of the devices. In the first part of the study, we derived a new ideal open-circuit voltage equation for a thin-film heterojunction solar cell by taking into account the current contribution from the depletion region. The accuracy of the new equation was validated through a simulation model in the second part of the study. Another simulation model was also used to clarify the design rules of the n-type layer in a wide band gap CIG(SSe)2 solar cell. Our work stressed the importance of a positive conduction band offset on the n-/p-type interface, through the use of a low electron affinity n-type material for a solar cell with a high open-circuit voltage . Through a precise selection of the window layer material, a buffer-free CIG(SSe)2 design is sufficient to fulfill such conditions. We also proposed the specific roles of the n-type layer, i.e., as a passivation layer and selective electron contact, in the operation of CIGS2 solar cells.


Science ◽  
2020 ◽  
Vol 367 (6482) ◽  
pp. 1097-1104 ◽  
Author(s):  
Jixian Xu ◽  
Caleb C. Boyd ◽  
Zhengshan J. Yu ◽  
Axel F. Palmstrom ◽  
Daniel J. Witter ◽  
...  

Wide–band gap metal halide perovskites are promising semiconductors to pair with silicon in tandem solar cells to pursue the goal of achieving power conversion efficiency (PCE) greater than 30% at low cost. However, wide–band gap perovskite solar cells have been fundamentally limited by photoinduced phase segregation and low open-circuit voltage. We report efficient 1.67–electron volt wide–band gap perovskite top cells using triple-halide alloys (chlorine, bromine, iodine) to tailor the band gap and stabilize the semiconductor under illumination. We show a factor of 2 increase in photocarrier lifetime and charge-carrier mobility that resulted from enhancing the solubility of chlorine by replacing some of the iodine with bromine to shrink the lattice parameter. We observed a suppression of light-induced phase segregation in films even at 100-sun illumination intensity and less than 4% degradation in semitransparent top cells after 1000 hours of maximum power point (MPP) operation at 60°C. By integrating these top cells with silicon bottom cells, we achieved a PCE of 27% in two-terminal monolithic tandems with an area of 1 square centimeter.


2015 ◽  
Vol 9 (8) ◽  
pp. 453-456 ◽  
Author(s):  
Shuo Wang ◽  
Vladimir Smirnov ◽  
Tao Chen ◽  
Xiaodan Zhang ◽  
Shaozhen Xiong ◽  
...  

Author(s):  
Mengmeng Chen ◽  
Muhammad Akmal Kamarudin ◽  
Ajay K. Baranwal ◽  
Gaurav Kapil ◽  
Teresa S. Ripolles ◽  
...  

2020 ◽  
Vol 12 (19) ◽  
pp. 21772-21778 ◽  
Author(s):  
Qing-Qing Ye ◽  
Meng Li ◽  
Xiao-Bo Shi ◽  
Ming-Peng Zhuo ◽  
Kai-Li Wang ◽  
...  

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1314 ◽  
Author(s):  
Edison Castro ◽  
Albert Artigas ◽  
Anna Pla-Quintana ◽  
Anna Roglans ◽  
Fang Liu ◽  
...  

The synthesis, characterization, and incorporation of open-cage [60]fullerene derivatives as electron-transporting materials (ETMs) in perovskite solar cells (PSCs) with an inverted planar (p-i-n) structure is reported. Following optical and electrochemical characterization of the open-cage fullerenes 2a–c, p-i-n PSCs with a indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS)/perovskite/fullerene/Ag structure were prepared. The devices obtained from 2a–b exhibit competitive power conversion efficiencies (PCEs) and improved open-circuit voltage (Voc) values (>1.0 V) in comparison to a reference cell based on phenyl-C61-butyric-acid methyl-ester (PC61BM). These results are rationalized in terms of a) the higher passivation ability of the open-cage fullerenes with respect to the other fullerenes, and b) a good overlap between the highest occupied molecular orbital/lowest unoccupied molecular orbital (HOMO/LUMO) levels of 2a–b and the conduction band of the perovskite.


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