scholarly journals Theoretical and experimental assessment of thinned germanium substrates for III–V multijunction solar cells

2020 ◽  
Vol 28 (11) ◽  
pp. 1097-1106
Author(s):  
Iván Lombardero ◽  
Mario Ochoa ◽  
Naoya Miyashita ◽  
Yoshitaka Okada ◽  
Carlos Algora
Keyword(s):  
Solar Cells ◽  
Experimental Assessment ◽  
Multijunction Solar Cells ◽  
Germanium Substrates

Thinned Germanium Substrates for III-V Multijunction Solar Cells

2019 ◽  
Author(s):  
Ivan Lombardero ◽  
Naoya Miyashita ◽  
Mario Ochoa ◽  
Yoshitaka Okada ◽  
Carlos Algora
Keyword(s):  
Solar Cells ◽  
Multijunction Solar Cells ◽  
Germanium Substrates

Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells

2005 ◽  
Vol 40 (10-11) ◽  
pp. 1039-1042 ◽  
Author(s):  
G. Timò ◽  
C. Flores ◽  
R. Campesato
Keyword(s):  
Solar Cells ◽  
Tunnel Diodes ◽  
Multijunction Solar Cells

Development of germanium-on-germanium engineered substrates for III-V multijunction solar cells

2020 ◽  
Author(s):  
Guillaume Courtois ◽  
Rufi Kurstjens ◽  
Jinyoun Cho ◽  
Kristof Dessein ◽  
Ivan Garcia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Multijunction Solar Cells ◽  
Engineered Substrates

scholarly journals Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Pablo Caño ◽  
Carmen M. Ruiz ◽  
Amalia Navarro ◽  
Beatriz Galiana ◽  
Iván García ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gallium Phosphide ◽  
Growth Process ◽  
Electrical Characterization ◽  
Substrate Preparation ◽  
Nucleation Layer ◽  
Si Substrates ◽  
Ideal Candidate ◽  
Multijunction Solar Cells ◽  
Multijunction Solar Cell

Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.

III‐V//Si multijunction solar cells with 30% efficiency using smart stack technology with Pd nanoparticle array

2019 ◽  
Vol 28 (1) ◽  
pp. 16-24 ◽  
Author(s):  
Kikuo Makita ◽  
Hidenori Mizuno ◽  
Takeshi Tayagaki ◽  
Taketo Aihara ◽  
Ryuji Oshima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Nanoparticle Array ◽  
Pd Nanoparticle ◽  
Multijunction Solar Cells

Measuring the Junction Temperature of GaInP/GaInAs/Ge Multijunction Solar Cells Using Photoluminescence

2011 ◽  
Vol 50 (9) ◽  
pp. 092302 ◽  
Author(s):  
Gia-Wei Shu ◽  
Chiun-Hsiang Tung ◽  
Shr-Chang Tung ◽  
Po-Chen Su ◽  
Ji-Lin Shen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Junction Temperature ◽  
Multijunction Solar Cells

Material Aspects Of The Fabrication Of Multijunction Solar Cells

1985 ◽  
Author(s):  
James A. Hutchby ◽  
Robert J. Markunas ◽  
Salah M. Bedair
Keyword(s):  
Solar Cells ◽  
Multijunction Solar Cells

Improvement of Radiation Resistance of Multijunction GaInP/Ga(In)As/Ge Solar Cells with Application of Bragg Reflectors

2010 ◽  
Vol 74 ◽  
pp. 225-230 ◽  
Author(s):  
Vladimir M. Lantratov ◽  
Viktor M. Emelyanov ◽  
Nikolay A. Kalyuzhnyy ◽  
Sergey A. Mintairov ◽  
Maxim Z. Shvarts
Keyword(s):  
Solar Cells ◽  
Radiation Resistance ◽  
Radiation Treatment ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Charge Carriers ◽  
Bragg Reflectors ◽  
Multijunction Solar Cells ◽  
Operation Period ◽  
Long Operation

Feasibility to increase the radiation resistance of multijunction solar cells in using Bragg reflectors has been shown. Two designs of Bragg reflectors for multijunction solar cells, which allow ensuring in the Ga(In)As subcell base an effective collection of minority charge carriers at the decrease of their diffusion length caused by radiation treatment, have been investigated. Influence of subcells’ thicknesses of n-p GaInP/Ga(In)As/Ge solar cell under 1 MeV electron irradiation with fluences up to 3•1015 cm–2 on short circuit current was considered. Optimal thicknesses of GaInP and GaInAs subcells with Bragg reflectors, depending on the rated operation period on the geostationary orbit, were estimated. It has been shown that such an optimization allows to achieve efficiency at long operation of solar cells on the orbit noticeably higher than that of non-optimized cells.

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