Improved fill factor and open circuit voltage by crystalline selenium at the Cu(In,Ga)Se2 /buffer layer interface in thin film solar cells

2010 ◽  
Vol 18 (4) ◽  
pp. 249-256 ◽  
Author(s):  
C. Platzer-Björkman ◽  
P. Zabierowski ◽  
J. Pettersson ◽  
T. Törndahl ◽  
M. Edoff
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Layer Interface

scholarly journals Features of model thin-film solar cells photoelectric characteristics based on a non-toxic multi-component connection CuZn2AlS4

2021 ◽  
Vol 5 (3) ◽  
pp. 242-250
Author(s):  
D. Sergeyev ◽  
K. Shunkeyev ◽  
B. Kuatov ◽  
N. Zhanturina
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Current Voltage

In this paper, the features of the characteristics of model thin-film solar cells based on the non-toxic multicomponent compound CuZn2AlS4 (CZAS) are considered. The main parameters (open-circuit voltage, short-circuit current, fill factor, efficiency) and characteristics (quantum efficiency, current-voltage characteristic) of thin-film solar cells based on CZAS have been determined. The minimum optimal thickness of the CZAS absorber is found (1-1.25 microns). Deterioration of the performance of solar cells with an increase in operating temperature (280-400 K) is shown. It is revealed that in the wavelength range of 390-500 nm CZAS has a high external quantum efficiency, which allows its use in designs of multi-junction solar cells designed to absorb solar radiation in the specified range. It is shown that the combination of CZAS films with a buffer layer of non-toxic ZnS increases the performance of solar cells.

A novel p-type and metallic dual-functional Cu–Al2O3 ultra-thin layer as the back electrode enabling high performance of thin film solar cells

2016 ◽  
Vol 52 (71) ◽  
pp. 10708-10711 ◽  
Author(s):  
Qinxian Lin ◽  
Yantao Su ◽  
Ming-Jian Zhang ◽  
Xiaoyang Yang ◽  
Sheng Yuan ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Performance Improvement ◽  
High Performance ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Dual Functional ◽  
P Type

Increasing the open-circuit voltage (Voc) along with the fill factor (FF) is pivotal for the performance improvement of solar cells.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Polycrystalline silicon thin-film solar cells prepared by layered laser crystallization with 540mV open circuit voltage

2014 ◽  
Vol 562 ◽  
pp. 430-434 ◽  
Author(s):  
Jonathan Plentz ◽  
Gudrun Andrä ◽  
Annett Gawlik ◽  
Ingmar Höger ◽  
Guobin Jia ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Thin Film Solar Cells ◽  
Laser Crystallization ◽  
Silicon Thin Film

Solution-Processed ZnxCd1–xS Buffer Layers for Vapor Transport-Deposited SnS Thin-Film Solar Cells: Achieving High Open-Circuit Voltage

2019 ◽  
Vol 12 (6) ◽  
pp. 7001-7009 ◽  
Author(s):  
Pravin S. Pawar ◽  
Jae Yu Cho ◽  
KrishnaRao Eswar Neerugatti ◽  
Soumyadeep Sinha ◽  
Tanka Raj Rana ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Vapor Transport ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Solution Processed
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