scholarly journals Real-time examination of cAMP activity at relaxin family peptide receptors using a BRET-based biosensor

2018 ◽  
Vol 6 (5) ◽  
pp. e00432 ◽  
Author(s):  
Adam L. Valkovic ◽  
Miranda B. Leckey ◽  
Alice R. Whitehead ◽  
Mohammed A. Hossain ◽  
Asuka Inoue ◽  
...  
Author(s):  
Martina Kocan ◽  
Sheng Yu Ang ◽  
Roger J. Summers

2018 ◽  
pp. 4615-4630
Author(s):  
Martina Kocan ◽  
Sheng Yu Ang ◽  
Roger J. Summers

Author(s):  
Roger J. Summers ◽  
Michelle L. Halls ◽  
Ross A. D. Bathgate

2018 ◽  
pp. 4583-4615
Author(s):  
Roger J. Summers ◽  
Michelle L. Halls ◽  
Ross A. D. Bathgate

2008 ◽  
Vol 13 (15-16) ◽  
pp. 640-651 ◽  
Author(s):  
Emma T. van der Westhuizen ◽  
Michelle L. Halls ◽  
Chrishan S. Samuel ◽  
Ross A.D. Bathgate ◽  
Elaine N. Unemori ◽  
...  

2009 ◽  
Vol 1160 (1) ◽  
pp. 54-59 ◽  
Author(s):  
Angela Manegold Svendsen ◽  
Milka Vrecl ◽  
Louise Knudsen ◽  
Anders Heding ◽  
John D. Wade ◽  
...  

Author(s):  
Saeid Masoumi ◽  
Hassan Hajghassem ◽  
Alireza Erfanian ◽  
Ahmad Molaei Rad

Smart sensors based on graphene field effect transistor and biologically receptors are regarded as a promising nanomaterial that could be the basis for future generations of selective real-time monitoring of target analytes and smaller electronics. So the purpose of this paper is to provide details a real-time and selective explosive sensor based on GFETs and PDA-based lipid membranes coupled with biologically inspired TNT peptide receptors. Following an introduction, this paper describes the way of fabrication of the GFETs device by investigation methods for transferring graphene sheet from Cu substrates to target substrates, which is functionalized by the TNT peptide receptors, in order to offer a system which has the capability of answering the presence of related target molecules. Field effet transistor was fabricated using graphene as a channel and monitored by the source-drain current and back-gate voltage curves in the measurement. The transport property changed compared to that of the FET made by intrinsic graphene, that is, the Dirac point position moved from positive Vg to negative Vg, indicating the transition of graphene from p-type to n-type after annealing in TNT, and GFET sensor show good sensitivity and selectivity response.


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