Comparison of ITO prepared by capacitive RF magnetron sputtering and DC facing target sputtering as an anode on the organic light emitting diode

2009 ◽  
Vol 206 (9) ◽  
pp. 2206-2211 ◽  
Author(s):  
Sang Ho Kim ◽  
Chul Yoon
Keyword(s):  
Magnetron Sputtering ◽  
Light Emitting Diode ◽  
Rf Magnetron Sputtering ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Facing Target Sputtering

Characteristics of ITO Thin Films for Organic Light Emitting Diode by using a Low-Frequency Magnetron Sputtering Method

2007 ◽  
Vol 470 (1) ◽  
pp. 251-257 ◽  
Author(s):  
Myung Chan Kim ◽  
Sang Ho Sohn ◽  
Duck Kyu Park ◽  
Sang Kooun Jung ◽  
Eun Lyoung Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Light Emitting Diode ◽  
Low Frequency ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Ito Thin Films

Optimization of Anodic Layer and Fabrication of Organic Light Emitting Diode

2012 ◽  
Vol 488-489 ◽  
pp. 1348-1352
Author(s):  
N. Gopalakrishnan ◽  
Subramaniam Gowrishankar ◽  
T.R. Devidas ◽  
L. Balakrishnan
Keyword(s):  
Light Emitting Diode ◽  
Electrical Characterization ◽  
Rf Magnetron Sputtering ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Anode Layer ◽  
Working Pressure ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light

Ga doped ZnO (GZO) films of different concentrations (1, 2 and 4 mol%) have been deposited on glass substrates by RF magnetron sputtering. The grown layers at room temperature have been subjected to structural, optical and electrical characterization. It has been found that 2 mol% Ga doped ZnO has best structural, optical and electrical properties which has been used as anode layer for the fabrication of Organic Light Emitting Diode (OLED). The Zn0.98Ga0.02O film was then deposited at a lower working pressure of 0.015 mbar to obtain a good carrier concentration. The OLED structure has been fabricated with best GZO as anode layer, [N, N*-Diphenyl N, N*-Di-p-Tolylbenzene-1] as hole emitting layer and (Alq3) as electron transport layer. The fabricated OLED device has been subjected to current-voltage characteristics.

Effects of Nitridation Time on Top-emission Inverted Organic Light Emitting Diode

PIERS Online ◽  
2007 ◽  
Vol 3 (6) ◽  
pp. 821-824 ◽  
Author(s):  
Chien-Chang Tseng ◽  
Liang-Wen Ji ◽  
Yu Sheng Tsai ◽  
Fuh-Shyang Juang
Keyword(s):  
Light Emitting Diode ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Nitridation Time ◽  
Organic Light
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