Reproducible resistive-switching behavior in copper-nitride thin film prepared by plasma-immersion ion implantation

2011 ◽  
Vol 208 (4) ◽  
pp. 874-877 ◽  
Author(s):  
Qian Lu ◽  
Xin Zhang ◽  
Wei Zhu ◽  
Yongning Zhou ◽  
Qianfei Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Copper Nitride ◽  
Plasma Immersion Ion Implantation

scholarly journals Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2755
Author(s):  
Tzu-Han Su ◽  
Ke-Jing Lee ◽  
Li-Wen Wang ◽  
Yu-Chi Chang ◽  
Yeong-Her Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Scanning Electron Microscope Image ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Electron Microscope Image ◽  
Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film

2020 ◽  
Vol 46 (13) ◽  
pp. 21196-21201 ◽  
Author(s):  
Hui-Chuan Liu ◽  
Xin-Gui Tang ◽  
Qiu-Xiang Liu ◽  
Yan-Ping Jiang ◽  
Wen-Hua Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Nanostructured Tio2 ◽  
Zro2 Thin Film ◽  
Conduction Mechanisms

Resistive-switching behavior and mechanism in copper-nitride thin films prepared by DC magnetron sputtering

2012 ◽  
Vol 209 (10) ◽  
pp. 1996-2001 ◽  
Author(s):  
Wei Zhu ◽  
Xin Zhang ◽  
Xiaoniu Fu ◽  
Yongning Zhou ◽  
Shengyun Luo ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Dc Magnetron Sputtering ◽  
Resistive Switching Behavior ◽  
Copper Nitride

scholarly journals Resistive switching behavior in Lu2O3 thin film for advanced flexible memory applications

2014 ◽  
Vol 9 (1) ◽  
pp. 3 ◽  
Author(s):  
Somnath Mondal ◽  
Jim-Long Her ◽  
Keiichi Koyama ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Memory Applications
Sign in / Sign up

Export Citation Format

Share Document