Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes

2004 ◽  
Vol 1 (8) ◽  
pp. 2210-2227 ◽  
Author(s):  
M. Hermann ◽  
E. Monroy ◽  
A. Helman ◽  
B. Baur ◽  
M. Albrecht ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Vertical Transport ◽  
Resonant Tunneling Diodes ◽  
Group Iii ◽  
Tunneling Diodes ◽  
Group Iii Nitride

Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices

2012 ◽  
Vol 41 (5) ◽  
pp. 965-970 ◽  
Author(s):  
Elias Warde ◽  
Salam Sakr ◽  
Maria Tchernycheva ◽  
Francois Henry Julien
Keyword(s):  
Resonant Tunneling ◽  
Vertical Transport ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

scholarly journals Bursting and Excitability in Neuromorphic Resonant Tunneling Diodes

2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Ignacio Ortega-Piwonka ◽  
Oreste Piro ◽  
José Figueiredo ◽  
Bruno Romeira ◽  
Julien Javaloyes
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes
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