Screening of built-in electric fields in group III-nitride laser diodes observed by means of hydrostatic pressure

2005 ◽  
Vol 2 (3) ◽  
pp. 1019-1022 ◽  
Author(s):  
G. Franssen ◽  
T. Suski ◽  
P. Perlin ◽  
R. Bohdan ◽  
A. Bercha ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Electric Fields ◽  
Laser Diodes ◽  
Group Iii ◽  
Group Iii Nitride ◽  
Nitride Laser

AlInN optical confinement layers for edge emitting group III-nitride laser structures

2009 ◽  
Vol 6 (S2) ◽  
pp. S897-S901 ◽  
Author(s):  
H. P. D. Schenk ◽  
M. Nemoz ◽  
M. Korytov ◽  
P. Vennéguès ◽  
P. Demolon ◽  
...  
Keyword(s):  
Optical Confinement ◽  
Group Iii ◽  
Group Iii Nitride ◽  
Nitride Laser

Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields

2001 ◽  
Vol 82 (1-3) ◽  
pp. 221-223 ◽  
Author(s):  
A Morel ◽  
P Lefebvre ◽  
T Taliercio ◽  
M Gallart ◽  
B Gil ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Binding Energies ◽  
Group Iii ◽  
Group Iii Nitride

scholarly journals Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys

2003 ◽  
Vol 83 (24) ◽  
pp. 4963-4965 ◽  
Author(s):  
S. X. Li ◽  
J. Wu ◽  
E. E. Haller ◽  
W. Walukiewicz ◽  
W. Shan ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Pressure Dependence ◽  
Group Iii ◽  
Nitride Alloys ◽  
Group Iii Nitride

Nano-Cathodoluminescence Measurement of Asymmetric Carrier Trapping and Radiative Recombination in GaN and InGaN Quantum Disks

2018 ◽  
Vol 24 (2) ◽  
pp. 93-98 ◽  
Author(s):  
Julia I. Deitz ◽  
A. T. M. Golam Sarwar ◽  
Santino D. Carnevale ◽  
Tyler J. Grassman ◽  
Roberto C. Myers ◽  
...  
Keyword(s):  
Electric Fields ◽  
Light Emitting Diode ◽  
Three Dimensional ◽  
Scanning Transmission Electron Microscope ◽  
Carrier Trapping ◽  
Group Iii ◽  
Quantum Disk ◽  
Scanning Transmission ◽  
Quantum Disks ◽  
Group Iii Nitride

AbstractThe ability to characterize recombination and carrier trapping processes in group-III nitride-based nanowires is vital to further improvements in their overall efficiencies. While advances in scanning transmission electron microscope (STEM)-based cathodoluminescence (CL) have offered some insight into nanowire behavior, inconsistencies in nanowire emission along with CL detector limitations have resulted in the incomplete understanding in nanowire emission processes. Here, two nanowire heterostructures were explored with STEM-CL: a polarization-graded AlGaN nanowire light-emitting diode (LED) with a GaN quantum disk and a polarization-graded AlGaN nanowire with three different InGaN quantum disks. Most nanowires explored in this study did not emit. For the wires that did emit in both structures, they exhibited asymmetrical emission consistent with the polarization-induced electric fields in the barrier regions of the nano-LEDs. In the AlGaN/InGaN sample, two of the quantum disks exhibited no emission potentially due to the three-dimensional landscape of the sample or due to limitations in the CL detection.

Screening of polarization induced electric fields in blue/violet InGaN/GaN laser diodes by Si doping in quantum barriers revealed by hydrostatic pressure

2006 ◽  
Vol 3 (6) ◽  
pp. 2303-2306 ◽  
Author(s):  
G. Franssen ◽  
T. Suski ◽  
P. Perlin ◽  
R. Bohdan ◽  
A. Bercha ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Electric Fields ◽  
Laser Diodes ◽  
Si Doping

Group III-Nitride-Based UV Laser Diodes

2020 ◽  
pp. 505-548
Author(s):  
Tim Wernicke ◽  
Luca Sulmoni ◽  
Christian Kuhn ◽  
Günther Tränkle ◽  
Markus Weyers ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Uv Laser ◽  
Group Iii ◽  
Group Iii Nitride

Effects of hydrostatic pressure on optical properties of InN and In-rich group III-nitride alloys

2004 ◽  
Vol 241 (14) ◽  
pp. 3107-3112 ◽  
Author(s):  
S. X. Li ◽  
J. Wu ◽  
W. Walukiewicz ◽  
W. Shan ◽  
E. E. Haller ◽  
...  
Keyword(s):  
Optical Properties ◽  
Hydrostatic Pressure ◽  
Group Iii ◽  
Nitride Alloys ◽  
Group Iii Nitride
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