Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates

2007 ◽  
Vol 22 (7) ◽  
pp. 736-741 ◽  
Author(s):  
T Swietlik ◽  
G Franssen ◽  
C Skierbiszewski ◽  
R Czernecki ◽  
P Wiśniewski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Group Iii ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Bulk Gan ◽  
Group Iii Nitride ◽  
Nitride Laser

Raman Study of MOMBE and Plasma-MOVPE Grown III-V Layers on Si(100).

1989 ◽  
Vol 160 ◽  
Author(s):  
J. Geurts ◽  
J. Finders ◽  
H. Münder ◽  
M. Kamp ◽  
M. Oehlers ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Raman Study

AbstractThe crystalline quality of the transition region between buffer layer and epilayer in MOMBE (metalorganic molecular beam epitaxy) and plasma-MOVPE (metalorganic vapour phase epitaxy) grown GaAs layers on Si(100) is analysed by Raman scattering with variation of the penetration depth and besides bevel polishing or step etching. The region with considerable lattice imperfections is essentially confined to the original buffer layer.

Group III hydride precursors for the metalorganic vapour phase epitaxy (MOVPE) of (AlGa)As/GaAs heterostructures

1991 ◽  
Vol 115 (1-4) ◽  
pp. 248-253 ◽  
Author(s):  
H. Protzmann ◽  
T. Marschner ◽  
O. Zsebök ◽  
W. Stolz ◽  
E.O. Göbel ◽  
...  
Keyword(s):  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Group Iii ◽  
Metalorganic Vapour Phase Epitaxy

Photoluminescence of Eu-doped GaN

2011 ◽  
Vol 1342 ◽  
Author(s):  
K.P. O’Donnell
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Pressures ◽  
Vapour Phase ◽  
High Energy ◽  
Photoluminescence Excitation ◽  
Vapour Phase Epitaxy ◽  
The University

ABSTRACTThis talk reviews work on the optical properties of Eu-doped GaN at the Semiconductor Spectroscopy laboratory of the University of Strathclyde. The principal experimental technique used has been lamp-based Photoluminescence/Excitation (PL/E) spectroscopy on samples produced mainly by high-energy ion implantation and annealing, either at low or high pressures of nitrogen, as described by Lorenz et al. [1]. These have been supplemented by samples doped in-situ either by Molecular Beam Epitaxy or Metallorganic Vapour Phase Epitaxy. Magneto-optic experiments on GaN:Eu were carried out in collaboration with the University of Bath.

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