Electron-phonon interaction in Er and Dy doped YAl3(BO3)4 single crystals

AbstractThe Urbach rule in MnGa_2Se_4 single crystals is studied. It is found that the long-wavelength absorption tail obeys the Urbach rule at photon energies in the range 2 . 1–2 . 2 eV. It is shown that a strong electron–phonon interaction exists in MnGa_2Se_4 single crystals.

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Electron–phonon interaction in Tm3+, Ho3+, and Dy3+ doped BaY2F8 single crystals

Optical Materials ◽

10.1016/j.optmat.2008.10.013 ◽

2009 ◽

Vol 31 (9) ◽

pp. 1366-1369 ◽

Cited By ~ 3

Author(s):

M. Mazzera ◽

A. Baraldi ◽

R. Capelletti ◽

M. Tonelli

Keyword(s):

Single Crystals ◽

Phonon Interaction ◽

Electron Phonon Interaction

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Influence of electron - phonon interaction on piezoresistance of single crystals n-Ge

JOURNAL OF ADVANCES IN PHYSICS ◽

10.24297/jap.v7i3.1589 ◽

2015 ◽

Vol 7 (3) ◽

pp. 1931-1938

Author(s):

Sergiy Luniov ◽

Olexandr Burban ◽

Petro Nazarchuk ◽

Andriy Zimych

Keyword(s):

Single Crystals ◽

Conduction Band ◽

Theoretical Calculations ◽

Uniaxial Pressure ◽

Phonon Interaction ◽

Absolute Minimum ◽

Electron Phonon Interaction ◽

Intervalley Scattering ◽

Increasing Temperature ◽

The Given

Piezoresistance of uniaxially deformed along the crystallographic direction [100] single crystals n-Ge for different fixed temperatures has been investigated. Presence of the significant piezoresistance for given conditions of the experiment is explained by increase in the effective mass and decrease in the relaxation time for electrons at the expense of the inversion of (L1-âˆ†1) type of an absolute minimum in n-Ge. Temperature dependencies of resistivity for undeformed (L1model of conduction band) and deformed under uniaxial pressureP=3Â GPÐ° (âˆ†1model of conduction band) single crystals n-Ge are obtained. Resistivity for undeformed single crystals n-Ge is changed according to the law Ï~T1.66. Resistivity for uniaxially deformed single crystals n-Ge is changed as Ï~T1.53. The given dependencies show that for L1 model of the conduction band in contrast to âˆ†1model one must equally with intravalley scattering of electrons on acoustic phonons take into account scattering of electrons on optical and intervalley phonons. Therefore reduction of the magnitude piezoresistanceÂ n-Ge with the increasing temperature is associated with â€œturning-offâ€ at the expense of the inversion of (L1-Î”1) type of absolute minimum under uniaxial pressure P>2.7 GPÐ° mechanism for scattering of electrons on intervalley and optical phonons. Comparison of results of theoretical calculations with relevant experimental data shows that peculiarities of piezoresistance n-Ge under uniaxial pressures Â 1.6<P<2.7Â GPÐ° for (L1-Î”1) model of conductionÂ bandÂ n-Ge can be described only taking into account nonequivalent intervalley scattering of electrons between the minima L1 andÂ Î”1.

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The acceptors behavior in the Single and Double Doped Bi12TiO20

Acta Scientifica Naturalis ◽

10.2478/asn-2018-0007 ◽

2018 ◽

Vol 5 (1) ◽

pp. 48-53

Author(s):

P. Petkova ◽

P. Vasilev ◽

Gulsah Celik Gul ◽

M. Mustafa ◽

I. Parushev

Keyword(s):

Absorption Coefficient ◽

Single Crystals ◽

Spectral Region ◽

Room Temperature ◽

Phonon Interaction ◽

Electron Phonon Interaction ◽

Urbach’S Energy

AbstractThe absorption coefficient of Bi12TiO20:AlI, Bi12TiO20:AlII, Bi12SiO20:P and Bi12SiO20:Al+P single crystals is measured in the spectral region of Urbach’s rule (1.52 – 2.92 eV) at room temperature. The parameters of electron-phonon interaction, Urbach’s energy and the constants of Urbach’s rule are calculated. The behavior of the acceptors Al3+and P5+in Urbach’s rule region has been considered.

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