scholarly journals The acceptors behavior in the Single and Double Doped Bi12TiO20

2018 ◽  
Vol 5 (1) ◽  
pp. 48-53
Author(s):  
P. Petkova ◽  
P. Vasilev ◽  
Gulsah Celik Gul ◽  
M. Mustafa ◽  
I. Parushev
Keyword(s):  
Absorption Coefficient ◽  
Single Crystals ◽  
Spectral Region ◽  
Room Temperature ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Urbach’S Energy

AbstractThe absorption coefficient of Bi12TiO20:AlI, Bi12TiO20:AlII, Bi12SiO20:P and Bi12SiO20:Al+P single crystals is measured in the spectral region of Urbach’s rule (1.52 – 2.92 eV) at room temperature. The parameters of electron-phonon interaction, Urbach’s energy and the constants of Urbach’s rule are calculated. The behavior of the acceptors Al3+and P5+in Urbach’s rule region has been considered.

Electron-phonon interaction in Er and Dy doped YAl3(BO3)4 single crystals

2007 ◽  
Vol 4 (3) ◽  
pp. 860-863 ◽  
Author(s):  
M. Mazzera ◽  
A. Baraldi ◽  
R. Capelletti ◽  
E. Beregi ◽  
I. Földvári
Keyword(s):  
Single Crystals ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

scholarly journals Правила Урбаха в монокристаллах MnGa-=SUB=-2-=/SUB=-Sе-=SUB=-4-=/SUB=- при оптических поглощениях

2019 ◽  
Vol 53 (6) ◽  
pp. 829
Author(s):  
Н.Н. Нифтиев
Keyword(s):  
Single Crystals ◽  
Phonon Interaction ◽  
Strong Electron ◽  
Urbach Rule ◽  
Long Wavelength ◽  
Electron Phonon Interaction ◽  
Wavelength Absorption ◽  
Absorption Tail

AbstractThe Urbach rule in MnGa_2Se_4 single crystals is studied. It is found that the long-wavelength absorption tail obeys the Urbach rule at photon energies in the range 2 . 1–2 . 2 eV. It is shown that a strong electron–phonon interaction exists in MnGa_2Se_4 single crystals.

Evaluation of the internal field produced by longitudinal optic phonons in ZnSe crystals

1983 ◽  
Vol 61 (7) ◽  
pp. 1017-1020 ◽  
Author(s):  
J. Daunay ◽  
Jac. Daunay ◽  
P. Bugnet
Keyword(s):  
Room Temperature ◽  
Internal Field ◽  
Mean Square ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Longitudinal Optic ◽  
The Mean ◽  
Increasing Temperature ◽  
Franz Keldysh Effect ◽  
Longitudinal Optic Phonons

Measurements of light absorption on ZnSe single crystals, conducted from 80 K to room temperature, show that the forbidden band gap decreases with increasing temperature because of the electron–phonon interaction. It is established for temperatures ranging from 140 to 320 K that longitudinal optic (LO) and acoustic (A) phonons operate simultaneously and exclusively so that [Formula: see text]. The first term, resulting from the Franz–Keldysh effect applied to the mean square field produced by LO phonons, provides the value of this field. It reaches 105 V cm−1 at room temperature.

Electron–phonon interaction in Tm3+, Ho3+, and Dy3+ doped BaY2F8 single crystals

2009 ◽  
Vol 31 (9) ◽  
pp. 1366-1369 ◽  
Author(s):  
M. Mazzera ◽  
A. Baraldi ◽  
R. Capelletti ◽  
M. Tonelli
Keyword(s):  
Single Crystals ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

scholarly journals Absorption structure of Rh4+ in doped Bi12TiO20

2015 ◽  
Vol 2 (1) ◽  
pp. 48-52
Author(s):  
P. Petkova ◽  
K. Boubaker
Keyword(s):  
Absorption Coefficient ◽  
Single Crystal ◽  
Single Crystals ◽  
Effective Mass ◽  
Oscillator Strength ◽  
Spectral Region ◽  
Near Infrared ◽  
Impurity Band ◽  
Infrared Spectral Region ◽  
Infrared Spectral

AbstractThe absorption coefficient of Bi12TiO20:Rh single crystals is measured in the spectral region 600-950 nm. The oscillator strength f and the transition moment of the impurity band Q are calculated in the near infrared spectral region. The effective mass of doped single crystal has been determined also.

Influence of electron - phonon interaction on piezoresistance of single crystals n-Ge

2015 ◽  
Vol 7 (3) ◽  
pp. 1931-1938
Author(s):  
Sergiy Luniov ◽  
Olexandr Burban ◽  
Petro Nazarchuk ◽  
Andriy Zimych
Keyword(s):  
Single Crystals ◽  
Conduction Band ◽  
Theoretical Calculations ◽  
Uniaxial Pressure ◽  
Phonon Interaction ◽  
Absolute Minimum ◽  
Electron Phonon Interaction ◽  
Intervalley Scattering ◽  
Increasing Temperature ◽  
The Given

Piezoresistance of uniaxially deformed along the crystallographic direction [100] single crystals n-Ge for different fixed temperatures has been investigated. Presence of the significant piezoresistance for given conditions of the experiment is explained by increase in the effective mass and decrease in the relaxation time for electrons at the expense of the inversion of (L1-∆1) type of an absolute minimum in n-Ge. Temperature dependencies of resistivity for undeformed (L1model of conduction band) and deformed under uniaxial pressureP=3 GPа (∆1model of conduction band) single crystals n-Ge are obtained. Resistivity for undeformed single crystals n-Ge is changed according to the law ρ~T1.66. Resistivity for uniaxially deformed single crystals n-Ge is changed as ρ~T1.53. The given dependencies show that for L1 model of the conduction band in contrast to ∆1model one must equally with intravalley scattering of electrons on acoustic phonons take into account scattering of electrons on optical and intervalley phonons. Therefore reduction of the magnitude piezoresistance  n-Ge with the increasing temperature is associated with “turning-off” at the expense of the inversion of (L1-Δ1) type of absolute minimum under uniaxial pressure P>2.7 GPа mechanism for scattering of electrons on intervalley and optical phonons. Comparison of results of theoretical calculations with relevant experimental data shows that peculiarities of piezoresistance n-Ge under uniaxial pressures  1.6<P<2.7 GPа for (L1-Δ1) model of conduction  band  n-Ge can be described only taking into account nonequivalent intervalley scattering of electrons between the minima L1 and Δ1.

Electron–phonon scattering limited hole mobility at room temperature in a MoS2 monolayer: first-principles calculations

2019 ◽  
Vol 21 (41) ◽  
pp. 22879-22887 ◽  
Author(s):  
Fei Guo ◽  
Zhe Liu ◽  
Mingfeng Zhu ◽  
Yisong Zheng
Keyword(s):  
Room Temperature ◽  
Phonon Scattering ◽  
Hole Mobility ◽  
Interaction Matrix ◽  
First Principles Calculations ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Mos2 Monolayer ◽  
Intervalley Scattering ◽  
Electron Phonon Scattering

Electron–phonon interaction matrix elements show that (a) valence band holes have stronger intervalley scattering than (b) conduction band electrons.

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