Temperature variation of radiative recombination rate of electron-hole pairs responsible for defect photoluminescence in a-Si:H

2009 ◽  
Vol 6 (S1) ◽  
pp. S167-S170 ◽  
Author(s):  
C. Ogihara ◽  
K. Morigaki
Keyword(s):  
Temperature Variation ◽  
Recombination Rate ◽  
Radiative Recombination ◽  
Radiative Recombination Rate ◽  
Electron Hole

Engineering of the radiative recombination rate in quantum dots coupled to the tilted cavity waveguide mode

2006 ◽  
Vol 21 (2) ◽  
pp. 162-166
Author(s):  
N V Kryzhanovskaya ◽  
P Zimmer ◽  
N N Ledentsov ◽  
A Hoffmann ◽  
D Bimberg ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Recombination Rate ◽  
Radiative Recombination ◽  
Waveguide Mode ◽  
Radiative Recombination Rate

Robust single-mode lasers based on hexagonal CdS microflakes

2020 ◽  
Vol 8 (32) ◽  
pp. 11201-11208
Author(s):  
Yang Mi ◽  
Yaoyao Wu ◽  
Jinchun Shi ◽  
Sheng-Nian Luo
Keyword(s):  
Radiative Recombination ◽  
Single Mode ◽  
Whispering Gallery Mode ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
High Quality ◽  
Time Resolved ◽  
Whispering Gallery ◽  
Electron Hole Plasma ◽  
Time Resolved Photoluminescence

We have achieved single-mode whispering-gallery-mode lasing in CdS microflakes with sharp linewidth (∼0.12 nm) and high quality factor (∼4200). Such lasers are superior to previous CdS lasers in these lasing parameters. Through time-resolved photoluminescence measurements, electron–hole plasma recombination is established to be the lasing mechanism. The radiative recombination rate of CdS microflakes is enhanced by a factor of ∼4.7 due to the Purcell effect.

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