An ab initio-based approach to the adsorption behavior of In on InAs wetting layer grown on GaAs(001) substrate

2010 ◽  
Vol 8 (2) ◽  
pp. 245-247 ◽  
Author(s):  
Kosuke Ogasawara ◽  
Toru Akiyama ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Ab Initio ◽  
Adsorption Behavior ◽  
Wetting Layer

Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study

2020 ◽  
Vol 20 (7) ◽  
pp. 4358-4365
Author(s):  
Takumi Ohka ◽  
Toru Akiyama ◽  
Abdul Muizz Pradipto ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Ab Initio ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Adsorption Behavior ◽  
Ab Initio Study ◽  
Step Edges

Ab initio-based approach to novel behavior of InAs wetting layer surface grown on GaAs(001)

2013 ◽  
Vol 378 ◽  
pp. 13-16 ◽  
Author(s):  
Tomonori Ito ◽  
Kentaro Hirai ◽  
Toru Akiyama ◽  
Kohji Nakamura
Keyword(s):  
Ab Initio ◽  
Layer Surface ◽  
Wetting Layer ◽  
Novel Behavior

Ab initio study for adsorption-desorption behavior on InAs wetting layer surface grown on GaAs(001) substrate

2020 ◽  
Vol 532 ◽  
pp. 125369
Author(s):  
Kazuhiro Yonemoto ◽  
Toru Akiyama ◽  
Abdul Muizz Pradipto ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Ab Initio ◽  
Layer Surface ◽  
Wetting Layer ◽  
Ab Initio Study ◽  
Adsorption Desorption

Ab initio-based approach to elemental growth process on the InAs wetting layer grown on GaAs substrate

2013 ◽  
Vol 362 ◽  
pp. 2-5 ◽  
Author(s):  
Tomonori Ito ◽  
Kosuke Ogasawara ◽  
Tatsuhiko Sugitani ◽  
Toru Akiyama ◽  
Kohji Nakamura
Keyword(s):  
Ab Initio ◽  
Gaas Substrate ◽  
Growth Process ◽  
Wetting Layer

Ab initio-based approach to the reconstruction on InAs(111)A wetting layer grown on GaAs substrate

2010 ◽  
Vol 42 (10) ◽  
pp. 2731-2734 ◽  
Author(s):  
Naoki Ishimure ◽  
Toru Akiyama ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Ab Initio ◽  
Gaas Substrate ◽  
Wetting Layer
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