Directly confirming the Z 1/2 center as the electron trap in SiC through accessing the non‐radiative recombination

ABSTRACTWe review recent progresses on in-situ observation of lattice relaxation of III-V lattice-mismatched system and analyses of defect properties in III-V-N solar cell materials. We found that there were five phases during the InGaAs growth on GaAs substrate. The transition point of the dominant dislocation behavior could be determined precisely. We also found that compositionally step-graded InGaAs/GaAs(001) buffers with overshooting (OS) layers were effective to control the strain of the top layer from tensile to compression. To understand the defect properties that dominate the electrical property of CBE-grown GaAsN films, we characterized deep levels in CBE-grown GaAsN films by DLTS. In this characterization, a well-known electron trap E1 (Ec-0.33eV) center in n-GaAsN and p-GaAsN was confirmed to be non-radiative recombination center by using double-carrier pulse DLTS.

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Iron K-Line Emission from X-Ray Binaries

International Astronomical Union Colloquium ◽

10.1017/s0252921100107389 ◽

1988 ◽

Vol 102 ◽

pp. 47-50

Author(s):

K. Masai ◽

S. Hayakawa ◽

F. Nagase

Keyword(s):

Accretion Disk ◽

Radiative Recombination ◽

Characteristic Temperature ◽

Line Emission ◽

Ionization Front ◽

Continuum Radiation ◽

X Ray ◽

Low Mass ◽

X Ray Binaries

AbstractEmission mechanisms of the iron Kα-lines in X-ray binaries are discussed in relation with the characteristic temperature Txof continuum radiation thereof. The 6.7 keV line is ascribed to radiative recombination followed by cascades in a corona of ∼ 100 eV formed above the accretion disk. This mechanism is attained for Tx≲ 10 keV as observed for low mass X-ray binaries. The 6.4 keV line observed for binary X-ray pulsars with Tx> 10 keV is likely due to fluorescence outside the He II ionization front.

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HYDROGENATION EFFECTS ON RADIATIVE RECOMBINATION IN TWISTED SILICON

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1983417 ◽

1983 ◽

Vol 44 (C4) ◽

pp. C4-141-C4-147 ◽

Cited By ~ 2

Author(s):

D. Gwinner

Keyword(s):

Radiative Recombination

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Radiative recombination in semiconductors

Uspekhi Fizicheskih Nauk ◽

10.3367/ufnr.0068.195906b.0247 ◽

1959 ◽

Vol 68 (6) ◽

pp. 247-260 ◽

Cited By ~ 4

Author(s):

V.S. Vavilov

Keyword(s):

Radiative Recombination

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Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

MRS Proceedings ◽

10.1557/proc-775-p9.57 ◽

2003 ◽

Vol 775 ◽

Author(s):

Suk-Ho Choi ◽

Jun Sung Bae ◽

Kyung Jung Kim ◽

Dae Won Moon

Keyword(s):

Quantum Confinement ◽

Radiative Recombination ◽

Ion Beam ◽

Quantum Confinement Effect ◽

Visible Range ◽

Ion Beam Sputtering ◽

Transmission Electron ◽

Si Nanocrystals ◽

Beam Sputtering ◽

Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

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