First‐principles studies on structure stability, segregation, and work function of Mg doped with metal elements

Author(s):  
Chao Wang ◽  
Jianfeng Wang ◽  
Di Ma ◽  
Shijie Zhu ◽  
Liguo Wang ◽  
...  
2011 ◽  
Vol 249 (1) ◽  
pp. 185-189 ◽  
Author(s):  
Zhen-Kun Tang ◽  
Ling-Ling Wang ◽  
Li-Ming Tang ◽  
Xiao-Fei Li ◽  
Wen-Zhi Xiao ◽  
...  

2014 ◽  
Vol 887-888 ◽  
pp. 378-383 ◽  
Author(s):  
Yu Chen ◽  
Zheng Jun Yao ◽  
Ping Ze Zhang ◽  
Dong Bo Wei ◽  
Xi Xi Luo ◽  
...  

The structure stability, mechanical properties and electronic structures of B2 phase FeAl intermetallic compounds and FeAl ternary alloys containing V, Cr or Ni were investigated using first-principles density functional theory calculations. Several models are established. The total energies, cohesive energies, lattice constants, elastic constants, density of states, and the charge densities of Fe8Al8 and Fe8XAl7 ( X=V, Cr, Ni ) are calculated. The stable crystal structures of alloy systems are determined due to the cohesive energy results. The calculated lattice contants of Fe-Al-X ( X= V, Cr, Ni) were found to be related to the atomic radii of the alloy elements. The calculation and analysis of the elastic constants showed that ductility of FeAl alloys was improved by the addition of V, Cr or Ni, the improvement was the highest when Cr was used. The order of the ductility was as follows: Fe8CrAl7 > Fe8NiAl7 > Fe8VAl7 > Fe8Al8. The results of electronic structure analysis showed that FeAl were brittle, mainly due to the orbital hybridization of the s, p and d state electron of Fe and the s and p state electrons of Al, showing typical characteristics of a valence bond. Micro-mechanism for improving ductility of FeAl is that d orbital electron of alloying element is maily involved in hybridization of FeAl, alloying element V, Cr and Ni decrease the directional property in bonding of FeAl.


Crystals ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 173 ◽  
Author(s):  
Lili Liu ◽  
Xiaozhi Wu ◽  
Rui Wang ◽  
Zhengquan Hu ◽  
Youchang Jiang ◽  
...  

2018 ◽  
Vol 93 ◽  
pp. 329-337 ◽  
Author(s):  
Xingzhi Pang ◽  
Wenchao Yang ◽  
Jianbing Yang ◽  
Mingjun Pang ◽  
Yongzhong Zhan

2020 ◽  
Vol 172 ◽  
pp. 109356 ◽  
Author(s):  
Qian Wang ◽  
Changzhi Liu ◽  
Ruijuan Yao ◽  
Hong Zhu ◽  
Xiaomin Liu ◽  
...  

2020 ◽  
Vol 8 (3) ◽  
pp. 1307-1314 ◽  
Author(s):  
Abdul Jalil ◽  
Zhiwen Zhuo ◽  
Zhongti Sun ◽  
Fang Wu ◽  
Chuan Wang ◽  
...  

Phosphorene-like InP3 is reported with first-principles calculations, which is a direct-bandgap semiconductor with anisotropic carrier mobility and high catalytic activity toward the hydrogen evolution reaction.


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