Monte Carlo simulation of full energy spectrum of electrons emitted from silicon in Auger electron spectroscopy

2014 ◽  
Vol 47 (1) ◽  
pp. 113-119 ◽  
Author(s):  
N. Cao ◽  
B. Da ◽  
Y. Ming ◽  
S. F. Mao ◽  
K. Goto ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Energy Spectrum ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Full Energy

scholarly journals Laser induced selective electroless copper plating on polyurethane using EDTA-Cu as active material

2018 ◽  
Vol 8 (4) ◽  
pp. 331-339 ◽  
Author(s):  
Binggong Yan ◽  
Xiaodi Huang ◽  
Xuan Song ◽  
Lei Kang ◽  
Qihe Le ◽  
...  
Keyword(s):  
Energy Spectrum ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Active Material ◽  
Copper Plating ◽  
Electroless Copper Plating ◽  
X Ray ◽  
Scanning Area ◽  
Electroless Copper

Using EDTA-Cu as the active material and polyurethane as the matrix, flexible cathodes were fabricated by laser-induced electroless copper plating process (LPKF-LDS) and characterized by SEM, X-ray energy spectrum and Auger electron spectroscopy. Flexible cathodes prepared from EDTA-Cu and polyurethane showed good selectivity in copper plating process. Composition and particle morphology of EDTA-Cu, laser power, scanning speed, laser wavelength, laser spot size, pulse frequency etc. are the main factors that affect the fineness of electroless copper plating. By adjusting these parameters, the fineness of the copper plating was improved. X-ray energy spectrum and Auger electron spectroscopy results showed that after the laser scanning, both Cu^0 and Cu^(+1) appeared in the scanning area, revealing thus the mechanism of electroless copper plating for polyurethane-EDTA-Cu flexible cathodes.

The formation of low temperature Cu3Si in Ag(Cu)/Si structure upon annealing and its effects on adhesion and resistivity

2003 ◽  
Vol 766 ◽  
Author(s):  
Sungjin Hong ◽  
Seob Lee ◽  
Yeonkyu Ko ◽  
Jaegab Lee
Keyword(s):  
Low Temperature ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Si Substrate ◽  
Copper Silicide ◽  
Alloy Films ◽  
Cu Alloy ◽  
Cu Film ◽  
Rapid Drop

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

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