Oriented and Uniform Distribution of Dion–Jacobson Phase Perovskites Controlled by Quantum Well Barrier Thickness

Solar RRL ◽  
2019 ◽  
Vol 3 (9) ◽  
pp. 1900090 ◽  
Author(s):  
Yiting Zheng ◽  
Tingting Niu ◽  
Jian Qiu ◽  
Lingfeng Chao ◽  
Bixin Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Uniform Distribution ◽  
Barrier Thickness

scholarly journals Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors

2020 ◽  
Vol 28 (16) ◽  
pp. 23796
Author(s):  
Yi Chao Chow ◽  
Changmin Lee ◽  
Matthew S. Wong ◽  
Yuh-Renn Wu ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Barrier Thickness ◽  
Carrier Escape

Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells

2012 ◽  
Vol 101 (18) ◽  
pp. 181105 ◽  
Author(s):  
J. R. Lang ◽  
N. G. Young ◽  
R. M. Farrell ◽  
Y.-R. Wu ◽  
J. S. Speck
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Barrier Thickness ◽  
Escape Mechanism ◽  
Carrier Escape

scholarly journals Dependence of spectral behavior in an InGaN/GaN quantum-well light-emitting diode on the prestrained barrier thickness

2008 ◽  
Vol 104 (4) ◽  
pp. 043108 ◽  
Author(s):  
Chih-Feng Lu ◽  
Chi-Feng Huang ◽  
Yung-Sheng Chen ◽  
C. C. Yang
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Barrier Thickness ◽  
Light Emitting ◽  
Spectral Behavior

CONTROLLING TUNNELING MODES BY A PHOTONIC QUANTUM WELL STRUCTURE BASED ON ZERO EFFECTIVE PHASE GAP

2013 ◽  
Vol 27 (10) ◽  
pp. 1350065
Author(s):  
TAO BO ◽  
YU FENG ◽  
FU-LI LI
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Light Propagation ◽  
Incident Angle ◽  
Barrier Thickness ◽  
Physical Reason ◽  
One Dimensional ◽  
Photonic Quantum Well ◽  
Effective Phase ◽  
Weakly Dependent

Light propagation through one-dimensional photonic quantum well (PQW) structures consisting of single-negative (SNG) materials is investigated theoretically. It is found that, based on the zero-effective-phase gap mechanism, the resonant tunneling modes can be manipulated to realized multiple channeled filters which are not only weakly dependent on the incident angle and polarization, but also insensitive to the deviation of the photonic barrier thickness. These properties are advanced to conventional PQW structures and the physical reason for the remarkable features of the proposed PQW structure is analyzed.

scholarly journals Barrier thickness dependence of MgxZn1−xO/ZnO quantum well (QW) on the performance of a p-NiO/QW/n-ZnO photodiode

RSC Advances ◽  
2019 ◽  
Vol 9 (51) ◽  
pp. 29967-29972
Author(s):  
Jun Dar Hwang ◽  
Jhong Yung Jiang
Keyword(s):  
Quantum Well ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Thickness Dependence ◽  
Radio Frequency Magnetron Sputtering ◽  
Barrier Thickness ◽  
System P ◽  
Sputtering System

An MgxZn1−xO/ZnO quantum well (QW) structure, with various barrier (MgxZn1−xO layer) thicknesses, was inserted into p-NiO/n-ZnO heterojunction photodiodes (HPDs) by using a radio-frequency magnetron sputtering system.

Barrier Thickness Designing of InGaN/GaN Multiple Quantum Well for Electroluminescence

2018 ◽  
Vol 39 (2) ◽  
pp. 208-213
Author(s):  
黄佳琳 HUANG Jia-lin ◽  
易淋凯 YI Lin-kai ◽  
周梅 ZHOU Mei ◽  
赵德刚 ZHAO De-gang
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Barrier Thickness

TUNNELING ESCAPE TIME OF ELECTRONS FROM A PARABOLIC QUANTUM WELL IN DOUBLE BARRIER HETEROSTRUCTURES

1991 ◽  
Vol 05 (04) ◽  
pp. 293-300 ◽  
Author(s):  
H. CRUZ ◽  
A. HERŃANDEZ-CABRERA ◽  
A. MUÑOZ
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
External Electric Field ◽  
Escape Time ◽  
Matrix Approach ◽  
Barrier Thickness ◽  
Airy Functions ◽  
Double Barrier ◽  
Method Of Calculation ◽  
Transfer Matrix Approach

We have calculated tunneling escape time of electrons from a compositionally graded parabolic quantum well under an external electric field using a method of calculation based on Airy functions and the transfer matrix approach. It is found that tunneling escape time decreases exponentially with decreasing barrier thickness.

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