Quantum well width and barrier Thickness effects on the perpendicular transport in polar and non-polar oriented AlGaN/GaN Resonant Tunneling Diodes

2021 ◽  
Author(s):  
Nafaa Kacem ◽  
Amel Bhouri ◽  
Jean-Louis Lazzari ◽  
Nejeh Jaba
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Barrier Thickness ◽  
Tunneling Diodes ◽  
Quantum Well Width

Dependence of Resonant Voltage on Quantum-Well Width in CaF$_{2}$/Fe$_{3}$Si/CaF$_{2}$ Resonant Tunneling Diodes

2011 ◽  
Vol 50 (10) ◽  
pp. 108002 ◽  
Author(s):  
Kenji Sadakuni-Makabe ◽  
Mitsushi Suzuno ◽  
Kazunori Harada ◽  
Hiro Akinaga ◽  
Takashi Suemasu
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Quantum Well Width

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

2016 ◽  
Vol 119 (16) ◽  
pp. 164501 ◽  
Author(s):  
Lin'an Yang ◽  
Yue Li ◽  
Ying Wang ◽  
Shengrui Xu ◽  
Yue Hao
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Quantum Well Structures ◽  
Tunneling Diodes ◽  
Asymmetric Quantum

Factors reducing the cut-off frequency of resonant tunneling diodes

2012 ◽  
Vol 4 (6) ◽  
pp. 605-611
Author(s):  
Nikolay Alkeev ◽  
Stanislav Averin ◽  
Aleksey Dorofeev ◽  
Nadezda Gladysheva
Keyword(s):  
Quantum Well ◽  
Equivalent Circuit ◽  
Delay Time ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Electron States ◽  
Tunneling Diodes ◽  
Active Layers ◽  
In Series ◽  
Additional Resistance

The impedance dependence of resonant tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is investigated in the range of 0.1–40 GHz. The analysis shows that the impedance of about 90% of unbiased RTDs is well described by an equivalent circuit (EC) consisting of parallel-connected resistance and capacitance and an additional resistance connected in series with this parallel combination. When a bias voltage is applied to these RTDs, one needs a “quantum” inductance LQ to describe the impedance behavior. We find the value of LQ and calculate the delay time of electrons in the quantum well (QW) of an RTD. The impedance of the rest 10% of the RTDs is well described by an EC that takes into account the recharge of localized electron states at the heterointerfaces of the active layers. Expressions for the cut-off frequencies that take into account the delay of electrons in the QW and the localized electron states at the heterointerfaces are derived. It is shown that the delay of electrons in the QW and localized electron states at the heterointerfaces may significantly reduce the cut-off frequency of RTDs.

Photoemission oscillation measurement of barrier thickness for InAs/AlSb resonant tunneling diodes

1996 ◽  
Vol 68 (10) ◽  
pp. 1406-1408 ◽  
Author(s):  
J. J. Zinck ◽  
D. H. Chow ◽  
J. N. Schulman ◽  
H. L. Dunlap
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Barrier Thickness ◽  
Tunneling Diodes
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