Quantum dots for single photon and photon pair technology

Author(s):  
R. M. Stevenson ◽  
R. J. Young ◽  
R. M. Thompson ◽  
Z. Yuan ◽  
B. E. Kardynal ◽  
...  
2021 ◽  
Vol 104 (8) ◽  
Author(s):  
David Bauch ◽  
Dirk Heinze ◽  
Jens Förstner ◽  
Klaus D. Jöns ◽  
Stefan Schumacher

2016 ◽  
Vol 122 (3) ◽  
Author(s):  
Jan Kettler ◽  
Matthias Paul ◽  
Fabian Olbrich ◽  
Katharina Zeuner ◽  
Michael Jetter ◽  
...  

2003 ◽  
Vol 238 (2) ◽  
pp. 321-324 ◽  
Author(s):  
S.Strauf ◽  
S. M. Ulrich ◽  
K. Sebald ◽  
P. Michler ◽  
T. Passow ◽  
...  

Nano Letters ◽  
2020 ◽  
Vol 20 (9) ◽  
pp. 6357-6363 ◽  
Author(s):  
Łukasz Dusanowski ◽  
Dominik Köck ◽  
Eunso Shin ◽  
Soon-Hong Kwon ◽  
Christian Schneider ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 930
Author(s):  
Xiaoying Huang ◽  
Rongbin Su ◽  
Jiawei Yang ◽  
Mujie Rao ◽  
Jin Liu ◽  
...  

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of μ0.96/μm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3± 0.08 GHz, the second-order correlation factor g2(τ)=0.0322 ±0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.


2004 ◽  
Vol 6 ◽  
pp. 99-99 ◽  
Author(s):  
X Brokmann ◽  
G Messin ◽  
P Desbiolles ◽  
E Giacobino ◽  
M Dahan ◽  
...  

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