Nanodiamond Injection into the Gas-Phase During CVD Diamond Film Growth

The growth of CVD diamond film was simulated by using revised KMC method. The simulation was conducted at CH3 radical concentration (0.01%-0.03%) and atomic hydrogen concentration (0.01%-0.5%). The results showed that: The CVD diamond film growth under revised KMC method is superior, which is in good agreement with the experimental results. The concentration of CH3 ([CH3]) and the concentration of atomic H ([H]) can produce important effects on the film deposition rate, surface roughness and the concentration of atom H embedded in the film.

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Simulations of polycrystalline CVD diamond film growth using a simplified Monte Carlo model

Diamond and Related Materials ◽

10.1016/j.diamond.2009.10.030 ◽

2010 ◽

Vol 19 (5-6) ◽

pp. 389-396 ◽

Cited By ~ 16

Author(s):

P.W. May ◽

N.L. Allan ◽

M.N.R. Ashfold ◽

J.C. Richley ◽

Yu.A. Mankelevich

Keyword(s):

Monte Carlo ◽

Diamond Film ◽

Film Growth ◽

Monte Carlo Model ◽

Cvd Diamond ◽

Cvd Diamond Film ◽

Diamond Film Growth

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Laser Diagnostics of CVD Diamond Film Growth

Optics and Photonics News ◽

10.1364/opn.7.5.000023 ◽

1996 ◽

Vol 7 (5) ◽

pp. 23 ◽

Cited By ~ 2

Author(s):

Charles S. Feigerle ◽

Robert W. Shaw

Keyword(s):

Diamond Film ◽

Film Growth ◽

Laser Diagnostics ◽

Cvd Diamond ◽

Cvd Diamond Film ◽

Diamond Film Growth

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Express in situ measurement of epitaxial CVD diamond film growth kinetics

Diamond and Related Materials ◽

10.1016/j.diamond.2016.12.021 ◽

2017 ◽

Vol 72 ◽

pp. 61-70 ◽

Cited By ~ 24

Author(s):

E.V. Bushuev ◽

V.Yu. Yurov ◽

A.P. Bolshakov ◽

V.G. Ralchenko ◽

A.A. Khomich ◽

...

Keyword(s):

Growth Kinetics ◽

Diamond Film ◽

Film Growth ◽

Cvd Diamond ◽

In Situ Measurement ◽

Cvd Diamond Film ◽

Diamond Film Growth

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First Principles Prediction of Gas-Phase Composition and Substrate Temperature for Diamond Film Growth

Molecular Simulation ◽

10.1080/08927020008044111 ◽

2000 ◽

Vol 25 (1-2) ◽

pp. 41-51 ◽

Cited By ~ 1

Author(s):

Yanxin Li ◽

Donald W. Brenner ◽

Xialan Dong ◽

Chiachung Sun

Keyword(s):

Phase Composition ◽

Substrate Temperature ◽

Gas Phase ◽

Diamond Film ◽

First Principles ◽

Film Growth ◽

Diamond Film Growth

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Simulations of CVD Diamond Film Growth Using a Simplified Monte Carlo Model

MRS Proceedings ◽

10.1557/proc-1203-j16-02 ◽

2009 ◽

Vol 1203 ◽

Author(s):

Paul William May ◽

Jeremy N. Harvey ◽

Neil L. Allan ◽

James C. Richley ◽

Yuri A. Mankelevich

Keyword(s):

Monte Carlo ◽

Vapour Deposition ◽

Film Growth ◽

Monte Carlo Model ◽

Chemical Vapour ◽

Cvd Diamond ◽

Surface Migration ◽

Average Diffusion ◽

Cvd Diamond Film ◽

Diamond Film Growth

AbstractA simple 1-dimensional Monte Carlo (KMC) model has been developed to simulate the chemical vapour deposition (CVD) of a diamond (100) surface. The model considers adsorption, etching/desorption, lattice incorporation, and surface migration along and across the dimer rows. The reaction probabilities for these processes are re-evaluated in detail and their effects upon the predicted growth rates and morphology are described. We find that for standard CVD diamond conditions, etching of carbon species from the growing surface is negligible. Surface migration occurs rapidly, but is mostly limited to CH2 species oscillating rapidly back and forth between two adjacent radical sites. Despite the average number of migration hops being in the thousands, the average diffusion length for a surface species is <2 sites.

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Atomic Scale Kinetic Monte Carlo (KMC) Simulation on a New {111}-Oriented Chemical Vapor Deposition (CVD) Diamond Film Growth Process: Two-Step Growth

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.548.345 ◽

2012 ◽

Vol 548 ◽

pp. 345-348

Author(s):

Li Zhu Zhang ◽

Fu Zhong Wang

Keyword(s):

Substrate Temperature ◽

Diamond Film ◽

Film Growth ◽

Kinetic Monte Carlo ◽

Chemical Vapor ◽

Cvd Diamond ◽

Film Deposition ◽

Atomic Scale ◽

Step Model ◽

Cvd Diamond Film

The growth of {111}-oriented CVD diamond film under a two-step model was simulated at atomic scale by using revised KMC method. The simulation was conducted at various substrate temperature (1100K-1400K), CH3 radical concentration (0.01%-0.03%) and atomic hydrogen concentration (0.005%-0.3%). The results showed that: Substrate temperature (Ts), the concentration of CH3 ([CH3]) and the concentration of atomic H ([H]) can produce important effects on the film deposition rate and surface roughness.

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