Features and Applications of the Haydock Recursion Method

1984 ◽  
pp. 761-768 ◽  
Author(s):  
Volker Heine
Keyword(s):  
Recursion Method

Solution of self-consistent field equations by the recursion method

1993 ◽  
Vol 3 (8) ◽  
pp. 1861-1872 ◽  
Author(s):  
J. P. Julien ◽  
D. Mayou
Keyword(s):  
Field Equations ◽  
Recursion Method ◽  
Consistent Field ◽  
Self Consistent ◽  
Self Consistent Field

Power Spectral Density of Nonlinear System Response: The Recursion Method

1993 ◽  
Vol 60 (2) ◽  
pp. 358-365 ◽  
Author(s):  
R. Vale´ry Roy ◽  
P. D. Spanos
Keyword(s):  
Broad Class ◽  
Formal Solution ◽  
Power Series Expansion ◽  
Kolmogorov Equation ◽  
System Response ◽  
Lanczos Algorithm ◽  
Spectral Densities ◽  
Recursion Method ◽  
Approximate Form ◽  
Single Well

Spectral densities of the response of nonlinear systems to white noise excitation are considered. By using a formal solution of the associated Fokker-Planck-Kolmogorov equation, response spectral densities are represented by formal power series expansion for large frequencies. The coefficients of the series, known as the spectral moments, are determined in terms of first-order response statistics. Alternatively, a J-fraction representation of spectral densities can be achieved by using a generalization of the Lanczos algorithm for matrix tridiagonalization, known as the “recursion method.” Sequences of rational approximations of increasing order are obtained. They are used for numerical calculations regarding the single-well and double-well Duffing oscillators, and Van der Pol type oscillators. Digital simulations demonstrate that the proposed approach can be quite reliable over large variations of the system parameters. Further, it is quite versatile as it can be used for the determination of the spectrum of the response of a broad class of randomly excited nonlinear oscillators, with the sole prerequisite being the availability, in exact or approximate form, of the stationary probability density of the response.

ENERGY GAP DEPENDENCE ON ANION CONCENTRATION FOR GaxIn1-xAsyP1-y QUATERNARY ALLOY BY RECURSION METHOD

2004 ◽  
Vol 18 (18) ◽  
pp. 955-962
Author(s):  
MUSA EL-HASAN ◽  
REZEK ESTATIEH
Keyword(s):  
Density Of States ◽  
Energy Gap ◽  
Local Density ◽  
Tight Binding ◽  
Quaternary Alloy ◽  
Average Density ◽  
Local Density Of States ◽  
Recursion Method ◽  
Orbital Decomposition ◽  
Lattice Matched

Three terminators have been tested, square root terminator, quadreture terminator and linear terminator, it was found that the linear terminator is the best, so it was used in calculating local density of states (LDOS) and it's orbital decomposition, alloy average density of states, and energy gap for different anion concentrations for InP lattice matched alloy. The results were compared with our previous calculations of (LDOS), and results from other methods. Energy gap was compared with experimental measurements. A five orbital sp3s* per atom model was used in the tight-binding representation of the Hamiltonian.

Study of the H chemisorption on a Cu surface by the recursion method

1980 ◽  
Vol 91 (1) ◽  
pp. 327-338 ◽  
Author(s):  
G. Cubiotti ◽  
B. Ginatempo
Keyword(s):  
Recursion Method

Evaluation of the Kubo formula for conductivity using the recursion method

1989 ◽  
Vol 1 (32) ◽  
pp. 5429-5439 ◽  
Author(s):  
A Levy Yeyati ◽  
M Weissmann ◽  
E Anda
Keyword(s):  
Kubo Formula ◽  
Recursion Method

Electronic Structure of Epitaxial SiO2/Si(100) Interfaces

1989 ◽  
Vol 159 ◽  
Author(s):  
T. Motooka
Keyword(s):  
Tight Binding ◽  
Interface States ◽  
Photoelectron Spectra ◽  
Band Spectrum ◽  
Binding Model ◽  
Initial Oxidation ◽  
Recursion Method ◽  
Densities Of States ◽  
Local Densities ◽  
Gap States

ABSTRACTThe local densities of states (LDOS) of epitaxial SiO, layers on Si(100) surfaces have been calculated using the recursion method combined with the Harrison's universal tight-binding model. The interface states associated with strained epitaxial layers of β-cristobalite (√2×√2)R45° and tridymite (1010)<0001> || Si(100)<011> were examined. In the β-cristobalite layer, gap states due to the surface Si dangling bonds appeared while they were eliminated by H termination. In the tridymite layer, the interface states primarily composed of the surface Si back bonds appeared near the Si conduction band minimum. Comparing the calculated DOS with photoelectron spectra for initial oxidation processes of clean Si(100), it was found that the valence band spectrum from the initial oxide formed at ∼300°C resembled that of the β-cristobalite layer.

Cluster recursion method of a non-orthogonal basis

1996 ◽  
Vol 6 (3) ◽  
pp. 197-210 ◽  
Author(s):  
S. Obata ◽  
K. Masuda-Jindo
Keyword(s):  
Orthogonal Basis ◽  
Recursion Method
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