Millimeter Impatt Diodes

1984 ◽  
pp. 93-99
Author(s):  
D. Lippens ◽  
E. Constant ◽  
M. R. Friscourt ◽  
P. A. Rolland ◽  
G. Salmer
Keyword(s):  
Impatt Diodes

Terahertz Radiators Based on Si~3C-SiC MQW IMPATT Diodes

2020 ◽  
Vol 10 (4) ◽  
pp. 501-506
Author(s):  
Monisha Ghosh ◽  
Arindam Biswas ◽  
Aritra Acharyya
Keyword(s):  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Noise Performance ◽  
Rf Power ◽  
Drift Diffusion ◽  
Frequency Bands ◽  
Atmospheric Window ◽  
Lower Noise ◽  
Impatt Diodes

Aims:: The potentiality of Multiple Quantum Well (MQW) Impacts Avalanche Transit Time (IMPATT) diodes based on Si~3C-SiC heterostructures as possible terahertz radiators have been explored in this paper. Objective:: The static, high frequency and noise performance of MQW devices operating at 94, 140, and 220 GHz atmospheric window frequencies, as well as 0.30 and 0.50 THz frequency bands, have been studied in this paper. Methods: The simulation methods based on a Self-Consistent Quantum Drift-Diffusion (SCQDD) model developed by the authors have been used for the above-mentioned studies. Results: Thus the noise performance of MQW DDRs will be obviously better as compared to the flat Si DDRs operating at different mm-wave and THz frequencies. Conclusion:: Simulation results show that Si~3C-SiC MQW IMPATT sources are capable of providing considerably higher RF power output with the significantly lower noise level at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands as compared to conventional flat Si IMPATT sources.

High-power parallel-array IMPATT diodes

1971 ◽  
Vol 7 (11) ◽  
pp. 301-303 ◽  
Author(s):  
A.M. Cowley ◽  
R.C. Patterson
Keyword(s):  
High Power ◽  
Parallel Array ◽  
Impatt Diodes

Monte Carlo simulation of 4H-SiC IMPATT diodes

2000 ◽  
Vol 15 (11) ◽  
pp. 1093-1100 ◽  
Author(s):  
J H Zhao ◽  
V Gruzinskis ◽  
Y Luo ◽  
M Weiner ◽  
M Pan ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impatt Diodes

Electron beam control of IMPATT diodes

1972 ◽  
Vol 15 (1) ◽  
pp. 140-142 ◽  
Author(s):  
A.C. Sanderson ◽  
A.G. Jordan
Keyword(s):  
Electron Beam ◽  
Beam Control ◽  
Impatt Diodes

Quasi-static analysis of X-band double-drift Lo-Hi-Lo silicon IMPATT diodes

1978 ◽  
Vol 45 (1) ◽  
pp. 37-48 ◽  
Author(s):  
MAU-CHUNG CHANG ◽  
MAO-CHIEH CHEN
Keyword(s):  
Static Analysis ◽  
X Band ◽  
Impatt Diodes

Improved performance of IMPATT diodes fabricated from Ge

1967 ◽  
Vol 55 (2) ◽  
pp. 223-224 ◽  
Author(s):  
R.L. Rulison ◽  
G. Gibbons ◽  
J.G. Josenhans
Keyword(s):  
Improved Performance ◽  
Impatt Diodes
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