MULTIPLE RESONANT RAMAN SPIN-FLIP PHONON SCATTERING AND 29 CM-1 PHONON TRANSPORT IN EXCITED RUBY IN A MAGNETIC FIELD

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-462-C6-464
Author(s):  
A. A. Kaplyanskii ◽  
S. A. Basoon ◽  
V. L. Shekhtman
Keyword(s):  
Magnetic Field ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Spin Flip ◽  
Resonant Raman

scholarly journals RESONANT RAMAN SCATTERING OF QUANTUM WIRE IN STRONG MAGNETIC FIELD

1999 ◽  
Vol 13 (17) ◽  
pp. 2275-2283 ◽  
Author(s):  
HYUN C. LEE
Keyword(s):  
Magnetic Field ◽  
Raman Scattering ◽  
Strong Magnetic Field ◽  
Coulomb Interaction ◽  
Quantum Wire ◽  
Spin Excitation ◽  
Momentum Dependence ◽  
Near Resonance ◽  
Resonant Raman ◽  
Resonant Raman Scattering

The resonant Raman scattering of a quantum wire in a strong magnetic field is studied, focused on the effect of long range Coulomb interaction and the spin–charge separation. The energy–momentum dispersions of charge and spin excitation obtained from Raman cross-section show the characteristc cross-over behaviour induced by inter-edge Coulomb interaction. The "SPE" peak near resonance in polarized spectra becomes broad due to the momentum dependence of charge velocity. The broad peak in the depolarized spectra is shown to originate from the disparity between charge and spin excitation velocity.

One phonon resonant Raman scattering in semiconductor quantum wires: Magnetic field effect

2013 ◽  
Vol 410 ◽  
pp. 126-130 ◽  
Author(s):  
Re. Betancourt-Riera ◽  
Ri. Betancourt-Riera ◽  
J.M. Nieto Jalil ◽  
R. Riera
Keyword(s):  
Magnetic Field ◽  
Raman Scattering ◽  
Field Effect ◽  
Quantum Wires ◽  
Magnetic Field Effect ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Study on Phonon Drag Effect and Phonon Transport in Thin Si-on-Insulator Layers

2015 ◽  
Vol 1117 ◽  
pp. 86-89 ◽  
Author(s):  
Hiroya Ikeda ◽  
Takuro Oda ◽  
Yuhei Suzuki ◽  
Yoshinari Kamakura ◽  
Faiz Salleh
Keyword(s):  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Infrared Photodetector ◽  
Phonon Drag ◽  
Drag Effect ◽  
Phonon Modes ◽  
Highly Sensitive ◽  
Insulator Layers

The Seebeck coefficient of P-doped ultrathin Si-on-insulator (SOI) layers is investigated for the application to a highly-sensitive thermopile infrared photodetector. It is found that the Seebeck coefficient originating from the phonon drag is significant in the lightly doped region and depends on the carrier concentration with increasing carrier concentration above ~5×1018 cm-3. On the basis of Seebeck coefficient calculations considering both electron and phonon distribution, the phonon-drag part of SOI Seebeck coefficient is mainly governed by the phonon transport, in which the phonon-phonon scattering process is dominant rather than the crystal boundary scattering even in the SOI layer with a thickness of 10 nm. This fact suggests that the phonon-drag Seebeck coefficient is influenced by the phonon modes different from the thermal conductivity.

The Temperature Dependence of Optical Phonon Scattering in Graphene under Strong Magnetic Field

2013 ◽  
Vol 82 (9) ◽  
pp. 094606 ◽  
Author(s):  
Zi-Wu Wang ◽  
Lei Liu ◽  
Lin Shi ◽  
Xiao-Jing Gong ◽  
Wei-Ping Li ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Temperature Dependence ◽  
Strong Magnetic Field ◽  
Optical Phonon ◽  
Phonon Scattering ◽  
Optical Phonon Scattering

scholarly journals Body-centered-cubic structure and weak anharmonic phonon scattering in tungsten

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Yani Chen ◽  
Jinlong Ma ◽  
Shihao Wen ◽  
Wu Li
Keyword(s):  
Phonon Scattering ◽  
Phonon Transport ◽  
High Symmetry ◽  
Body Centered Cubic ◽  
Phonon Branch ◽  
High Frequencies ◽  
Transverse Acoustic ◽  
Two Factors ◽  
Electron Phonon Scattering ◽  
Isotropy Condition

Abstract It was recently found that the anharmonic phonon–phonon scattering in tungsten is extremely weak at high frequencies, leading to a predominance of electron–phonon scattering and consequently anomalous phonon transport behaviors. In this work, we calculate the phonon linewidths of W along high-symmetry directions from first principles. We find that the weak phonon–phonon scattering can be traced back to two factors. The first is the triple degeneracy of the phonon branches at the P and H points, a universal property of elemental body-centered-cubic (bcc) structures. The second is a relatively isotropic character of the phonon dispersions. When both are met, phonon–phonon scattering rates must vanish at the P and H points. The weak phonon–phonon scattering feature is also applicable to Mo and Cr. However, in other elemental bcc substances like Na, the isotropy condition is violated due to the unusually soft character of the lower transverse acoustic phonon branch along the Γ-N direction, opening emission channels and leading to much stronger phonon–phonon scattering. We also look into the distributions of electron mean-free paths (MFPs) at room temperature in tungsten, which can help engineer the resistivity of nanostructured W for applications such as interconnects.

Modeling the fs Demagnetization: Laser-Induced Reversal in an Applied Magnetic Field

2006 ◽  
Vol 941 ◽  
Author(s):  
Francesco Dalla Longa ◽  
Dion Boesten ◽  
Harm H.J.E. Kicken ◽  
Wim J.M. de Jonge ◽  
Bert Koopmans
Keyword(s):  
Magnetic Field ◽  
Curie Temperature ◽  
Applied Field ◽  
Phonon Scattering ◽  
Magnetic System ◽  
Ultrafast Laser ◽  
Direct Relation ◽  
Magnetization Dynamics ◽  
Novel Model ◽  
Electron Phonon Scattering

ABSTRACTA novel model for ultrafast laser-induced magnetization dynamics is analyzed. Equilibration of the magnetic system is described by including electron-phonon scattering events with a finite spin flip probability. Recently, we demonstrated that such a model predicts a direct relation between the demagnetization time and the Gilbert damping. Here we present numerical simulations based on the same Hamiltonian, but including the presence of an external applied field. Thereby, reversal of the magnetization after heating above the Curie temperature (Tc) can be modeled. We demonstrate that magnetization reversal can be achieved even if the lattice temperature stays below Tc.

Variation of Stokes Output with Magnetic Field in InSb Spin-Flip Raman Laser Pumped by a CO2Laser

1977 ◽  
Vol 16 (6) ◽  
pp. 1075-1076
Author(s):  
Kazuhito Yasuda ◽  
Hirofumi Kondo ◽  
Junji Shirafuji ◽  
Yoshio Inuish
Keyword(s):  
Magnetic Field ◽  
Raman Laser ◽  
Spin Flip
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