High Temperature Failure Mechanisms of Sintered Silicon Nitride

1992 ◽  
pp. 391-406
Author(s):  
A. K. Mukhopadhyay ◽  
D. Chakraborty ◽  
S. K. Datta
1991 ◽  
Vol 17 (6) ◽  
pp. 335-341 ◽  
Author(s):  
A.K. Mukhopadhyay ◽  
S.K. Datta ◽  
D. Chakraborty

1985 ◽  
Vol 24 (3) ◽  
pp. 207-210
Author(s):  
V. A. Lavrenko ◽  
Yu. G. Gogotsi ◽  
A. B. Goncharuk ◽  
A. F. Alekseev ◽  
O. N. Grigor'ev ◽  
...  

1993 ◽  
Vol 115 (3) ◽  
pp. 268-272 ◽  
Author(s):  
Y. Mutoh ◽  
N. Miyahara ◽  
K. Yamaishi ◽  
T. Oikawa

Fracture Toughness of HIP-sintered silicon nitride decreased with increasing temperature up to 1200°C. The brittle-to-ductile transition was observed in the temperature range from 1200°C to 1275°C: the fracture toughness rapidly increased in the transition region. Above the transition temperature, the fracture toughness decreased with increasing temperature. Fracture toughness of sialon increased with increasing temperature. Transition of fracture mechanism was observed in sialon around 1300°C. The differences of temperature dependence of fracture toughness between two materials are interpreted in terms of the effects of grain-boundary glass phase on fracture.


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