Hot Electrons in III-V Compound Semiconductors

1973 ◽  
pp. 89-105
Author(s):  
H. Pötzl
Keyword(s):  
Compound Semiconductors ◽  
Hot Electrons

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

NOISE AND DIFFUSIVITY OF HOT ELECTRONS IN n-TYPE InSb

1981 ◽  
Vol 42 (C7) ◽  
pp. C7-215-C7-220 ◽  
Author(s):  
V. Bareikis ◽  
A. Galdikas ◽  
R. Miliu¡yté ◽  
J. Pozhela ◽  
Viktoravičius
Keyword(s):  
Hot Electrons

ON INTERVALLEY DIFFUSION OF HOT-ELECTRONS

1981 ◽  
Vol 42 (C7) ◽  
pp. C7-117-C7-122 ◽  
Author(s):  
R. Brunetti ◽  
C. Jacoboni ◽  
L. Reggiani
Keyword(s):  
Hot Electrons

Hot electrons in silicon oxide

2016 ◽  
Vol 187 (09) ◽  
pp. 971-979
Author(s):  
Vladimir A. Gritsenko
Keyword(s):  
Silicon Oxide ◽  
Hot Electrons

Millimeter- and Submillimeter-Wave Band Receiver on Hot Electrons

2009 ◽  
Vol 68 (6) ◽  
pp. 549-554
Author(s):  
Yu. Ye. Kamenev ◽  
F. F. Sizov ◽  
V. N. Dobrovolsky
Keyword(s):  
Submillimeter Wave ◽  
Hot Electrons ◽  
Wave Band

scholarly journals Plasmonic hot-electron photodetection with quasi-bound states in the continuum and guided resonances

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Wenhao Wang ◽  
Lucas V. Besteiro ◽  
Peng Yu ◽  
Feng Lin ◽  
Alexander O. Govorov ◽  
...  
Keyword(s):  
Bound States ◽  
Structural Parameters ◽  
Hybrid Structure ◽  
Fine Tuning ◽  
Hot Electrons ◽  
Hot Electron ◽  
Perfect Absorption ◽  
High Loss ◽  
Guided Mode ◽  
The Continuum

Abstract Hot electrons generated in metallic nanostructures have shown promising perspectives for photodetection. This has prompted efforts to enhance the absorption of photons by metals. However, most strategies require fine-tuning of the geometric parameters to achieve perfect absorption, accompanied by the demanding fabrications. Here, we theoretically propose a Ag grating/TiO2 cladding hybrid structure for hot electron photodetection (HEPD) by combining quasi-bound states in the continuum (BIC) and plasmonic hot electrons. Enabled by quasi-BIC, perfect absorption can be readily achieved and it is robust against the change of several structural parameters due to the topological nature of BIC. Also, we show that the guided mode can be folded into the light cone by introducing a disturbance to become a guided resonance, which then gives rise to a narrow-band HEPD that is difficult to be achieved in the high loss gold plasmonics. Combining the quasi-BIC and the guided resonance, we also realize a multiband HEPD with near-perfect absorption. Our work suggests new routes to enhance the light-harvesting in plasmonic nanosystems.

More Se Vacancies in Sb 2 Se 3 under Se‐Rich Conditions: An Abnormal Behavior Induced by Defect‐Correlation in Compensated Compound Semiconductors

Small ◽  
2021 ◽  
pp. 2102429
Author(s):  
Menglin Huang ◽  
Zenghua Cai ◽  
Shanshan Wang ◽  
Xin‐Gao Gong ◽  
Su‐Huai Wei ◽  
...  
Keyword(s):  
Compound Semiconductors ◽  
Abnormal Behavior

Amplification of Sound by Hot Electrons

1965 ◽  
Vol 9 (1) ◽  
pp. 69-70 ◽  
Author(s):  
P. J. Price
Keyword(s):  
Hot Electrons
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