Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Determination of the Mechanical Response of Thin Films with X-Rays

1993 ◽  
Vol 308 ◽  
Author(s):  
I. C. Noyan ◽  
G. Sheikh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Response ◽  
Strain Analysis ◽  
Local Strain ◽  
X Rays ◽  
Stress Strain ◽  
X Ray ◽  
The Individual

ABSTRACTThe mechanical response of a specimen incorporating thin films is dictated by a combination of fundamental mechanical parameters such as Young's moduli of the individual layers, and by configurational parameters such as adhesion strength at the interface(s), residual stress distribution and other process dependent factors. In most systems, the overall response will be dominated by the properties of the (much thicker) substrate. Failure within the individual layers, on the other hand, is dependent on the local strain distributions and can not be predicted from the substrate values alone. To better understand the mechanical response of these systems, the strain within the individual layers of the thin film system must be measured and correlated with applied stresses. Phase selectivity of X-ray stress/strain analysis techniques is well suited for this purpose. In this paper, we will review the use of the traditional x-ray stress/strain analysis methods for the determination of the mechanical properties of thin film systems.

scholarly journals The interpretation and analysis of diffuse scattering using Monte Carlo simulation methods

2007 ◽  
Vol 64 (1) ◽  
pp. 23-32 ◽  
Author(s):  
T. R. Welberry ◽  
D. J. Goossens
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Diffuse Scattering ◽  
Simulation Methods ◽  
Neutron Sources ◽  
X Ray ◽  
Average Structure

Studies of diffuse scattering had a prominent place in the first issue ofActa Crystallographica60 years ago at a time when conventional crystallography (determination of the average structure from Bragg peaks) was in its infancy. Since that time, conventional crystallography has developed enormously while diffuse-scattering analysis has seemingly lagged well behind. The paper highlights some of the extra difficulties involved in the measurement, interpretation and analysis of diffuse scattering and plots the progress that has been made. With the advent of the latest X-ray and neutron sources, area detectors and the ever-increasing power of computers, most disorder problems are now tractable. Two recent contrasting examples are described which highlight what can be achieved by current methods.

Compositional Determination of Sputtered Tantalum—Aluminum Thin Films

1971 ◽  
Vol 25 (4) ◽  
pp. 489-493
Author(s):  
James D. Nohe ◽  
David A. Green
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Absorption ◽  
Unit Area ◽  
X Ray ◽  
Glass Substrates ◽  
Fluorescence Measurements ◽  
Before And After ◽  
Film Weight

Tantalum–aluminum thin film composition has been determined destructively by atomic absorption and nondestructively by x-ray fluorescence spectroscopy. Samples representing several compositions (20–80 at.% aluminum) and thicknesses (500–6000 Å) were sputtered on glass, graphite, and platinum substrates. The films were dissolved from the platinum substrates for the determination of aluminum by atomic absorption. The weights of tantalum per unit area obtained by difference using this destructive technique were applied to the same samples on glass substrates for correlation with nondestructive x-ray fluorescence measurements. A linear curve, which is free from enhancement and absorption effects, is obtained for tantalum. This curve relates the nondestructive fluorescence intensities to film weights (µg/cm2) of tantalum. The composition of the film is determined nondestructively by utilizing this curve and the total film weight which is obtained by weighing the substrate before and after sputtering. Alternately, composition may be determined destructively by atomic absorption utilizing films dissolved from platinum substrates

Simultaneous Determination of the Thickness and Composition of Thin Film Samples Using Fundamental Parameters

1987 ◽  
Vol 31 ◽  
pp. 175-180
Author(s):  
James E. Willis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Simultaneous Determination ◽  
Similar Type ◽  
X Ray ◽  
Fundamental Parameters ◽  
Analysis Techniques ◽  
Layer Thin Film ◽  
Control Application

The use of empirical analysis techniques for the simultaneous determination of the thickness and composition of thin film samples usually requires a suite of well characterized similar type standards. While this may be adequate for a quality control application, this requirement severely limits the utility of X-ray fluorescence in the analysis of thin films in a service lab or research environment.The use of fundamental parameters in the analysis of thin films allows the simultaneous determination of the thickness and composition of single and multiple layer thin film unknown samples without the use of similar type standards.

Sign in / Sign up

Export Citation Format

Share Document