Band Offsets at Semiconductor Heterojunctions: Bulk or Interface Properties?

1989 ◽  
pp. 51-60
Author(s):  
Stefano Baroni ◽  
Raffaele Resta ◽  
Alfonso Baldereschi
Keyword(s):  
Interface Properties ◽  
Band Offsets ◽  
Semiconductor Heterojunctions

scholarly journals Band offsets, wells, and barriers at nanoscale semiconductor heterojunctions

2011 ◽  
Vol 84 (7) ◽  
Author(s):  
Yann-Michel Niquet ◽  
Christophe Delerue
Keyword(s):  
Band Offsets ◽  
Semiconductor Heterojunctions

An effective dipole model for predicting band offsets in semiconductor heterojunctions

1986 ◽  
Vol 60 (11) ◽  
pp. 4035-4038 ◽  
Author(s):  
Ying‐Chao Ruan ◽  
W. Y. Ching
Keyword(s):  
Dipole Model ◽  
Band Offsets ◽  
Semiconductor Heterojunctions

Transitivity of band offsets between semiconductor heterojunctions and oxide insulators

2011 ◽  
Vol 99 (17) ◽  
pp. 172101 ◽  
Author(s):  
V. V. Afanas’ev ◽  
H.-Y. Chou ◽  
M. Houssa ◽  
A. Stesmans ◽  
L. Lamagna ◽  
...  
Keyword(s):  
Band Offsets ◽  
Semiconductor Heterojunctions

Construction of Band Profiles for Semiconductor Heterojunctions and Layered Structures

1992 ◽  
Vol 260 ◽  
Author(s):  
J. W. Garland ◽  
L. Kassel ◽  
D. Yang ◽  
Z. Zhang ◽  
P. M. Raccah
Keyword(s):  
Sample Surface ◽  
Layered Structures ◽  
Optoelectronic Properties ◽  
Semiconductor Heterostructures ◽  
Localized States ◽  
Band Offsets ◽  
Transport Measurements ◽  
Band Profile ◽  
Semiconductor Heterojunctions

ABSTRACTBand profiles specify the position of all band edges as a function of distance from a sample surface or interface. They largely determine the electrical and optoelectronic properties of semiconductor heterostructures. Neither theory nor standard transport measurements alone have been able to give reliable values for band offsets, much less entire band profiles. However, the use of electroreflectance, which reveals crossover transitions between localized states or band edges present on opposite sides of an interface, and which allows us to measure accurately built-in fields, has allowed us to determine accurate band profiles for several types of semiconductor heterostructures. The procedure used to find the band profile is elucidated in detail for two technologically important cases.

Band Offsets in Semiconductor Heterojunctions

1992 ◽  
pp. 1-146 ◽  
Author(s):  
Edward T. Yu ◽  
James O. McCaldin ◽  
Thomas C. McGill
Keyword(s):  
Band Offsets ◽  
Semiconductor Heterojunctions
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