Screening Near Semiconductor Heterojunctions and Valence Band Offsets

Accuracy of zero-charge and zero-dipole approximations for the determination of valence-band offsets at semiconductor heterojunctions

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584251 ◽

1988 ◽

Vol 6 (4) ◽

pp. 1290 ◽

Cited By ~ 25

Author(s):

C. Priester

Keyword(s):

Valence Band ◽

Band Offsets ◽

Zero Charge ◽

Semiconductor Heterojunctions

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Theoretical valence band offsets of semiconductor heterojunctions

Applied Physics Letters ◽

10.1063/1.1483904 ◽

2002 ◽

Vol 80 (24) ◽

pp. 4543-4545 ◽

Cited By ~ 6

Author(s):

Kyurhee Shim ◽

Herschel Rabitz

Keyword(s):

Valence Band ◽

Band Offsets ◽

Semiconductor Heterojunctions

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Valence-band offsets at strained semiconductor heterojunctions

10.1117/12.190768 ◽

1994 ◽

Author(s):

Jianjun Xie ◽

Dong Lu

Keyword(s):

Valence Band ◽

Band Offsets ◽

Semiconductor Heterojunctions

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Calculation of the valence band offsets of common-anion semiconductor heterojunctions from core levels: The role of cation d orbitals

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583720 ◽

1987 ◽

Vol 5 (4) ◽

pp. 1239 ◽

Cited By ~ 18

Author(s):

Su-Huai Wei

Keyword(s):

Valence Band ◽

Band Offsets ◽

Semiconductor Heterojunctions ◽

D Orbitals ◽

Common Anion

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Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

Nanoscale Research Letters ◽

10.1186/s11671-019-3181-x ◽

2019 ◽

Vol 14 (1) ◽

Cited By ~ 1

Author(s):

Ya-Wei Huan ◽

Ke Xu ◽

Wen-Jun Liu ◽

Hao Zhang ◽

Dmitriy Anatolyevich Golosov ◽

...

Keyword(s):

Valence Band ◽

Transition Metal Dichalcogenides ◽

Three Dimensional ◽

Optoelectronic Devices ◽

Band Alignment ◽

Band Offsets ◽

Group Iii ◽

Nanoelectronic Devices ◽

Metal Dichalcogenides ◽

Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

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A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

MRS Proceedings ◽

10.1557/proc-240-99 ◽

1991 ◽

Vol 240 ◽

Cited By ~ 1

Author(s):

Emil S. Koteies

Keyword(s):

Quantum Wells ◽

Valence Band ◽

Accurate Determination ◽

Energy Difference ◽

Spectroscopic Technique ◽

Band Offsets ◽

Band Energy ◽

Semiconductor Quantum Wells ◽

Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

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