Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation

1988 ◽  
pp. 61-74 ◽  
Author(s):  
Eugene A. Irene
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Silicon Oxidation ◽  
Thin Film Silicon

Adhesion Strength of PDMS to Polyimide Bonding with Thin-film Silicon Dioxide

2021 ◽  
Author(s):  
Adwait Deshpande ◽  
Erfan Pourshaban ◽  
Chayanjit Ghosh ◽  
Aishwaryadev Banerjee ◽  
Hanseup Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Dioxide ◽  
Adhesion Strength ◽  
Thin Film Silicon

Microfabricated Fuel Cells with Thin-Film Silicon Dioxide Proton Exchange Membranes

2005 ◽  
Vol 152 (8) ◽  
pp. A1606 ◽  
Author(s):  
Christopher W. Moore ◽  
Jun Li ◽  
Paul A. Kohl
Keyword(s):  
Thin Film ◽  
Fuel Cells ◽  
Silicon Dioxide ◽  
Proton Exchange Membranes ◽  
Proton Exchange ◽  
Thin Film Silicon

Design on a Novel Titanium Dioxide Irregularly Distributed Bragg Reflector for Thin Film Silicon Solar Cells

2020 ◽  
Vol 20 (8) ◽  
pp. 5096-5101
Author(s):  
Kejie Dai ◽  
Xuan Zhao
Keyword(s):  
Thin Film ◽  
Titanium Dioxide ◽  
Solar Cells ◽  
Silicon Dioxide ◽  
Bragg Reflector ◽  
Silicon Solar Cells ◽  
Distributed Bragg Reflector ◽  
Theoretical Simulation ◽  
Thin Film Silicon ◽  
Simulation Results

Titanium dioxide, which leads an excellent optical performance, is proposed to design irregularly distributed Bragg reflector (IDBR) through theoretical simulation as well as experimental verification. Firstly, a primary distributed Bragg reflector (DBR) model with the titanium dioxide serving as low reflection layer in, and amorphous silicon as high reflection layer is analyzed. The titanium dioxide DBR shows much enhanced reflection bandwidth relative to the DBR with silicon dioxide. A further study suggests that a traditional titanium dioxide IDBR demonstrate much enhanced performance versus the silicon dioxide IDBR with similar structure. Besides, the reflection bandwidth of the IDBR, especially in the high wavelength range, is dramatically promoted with respect to the DBR. Finally, a novel gradient IDBR model is developed. The simulation results reveal a higher reflection bandwidth of the titanium dioxide gradient IDBR than the silicon dioxide one. The reflectance of the titanium dioxide gradient IDBR is up to 90% in a range by 300 to 1450 nm. And, the reflection bandwidth of the gradient IDBR is much improved respect to the traditional IDBR. It seems that the titanium dioxide gradient IDBR could be an efficient selection for the thin film silicon solar cells. Finally, the gradient IDBR were fabricated via plasma enhanced chemical vapor deposition (PECVD) on a silicon wafer. A further test demonstrates a reflectance over 95% in the range from 400 to 1400 nm, and verifies the simulation results.

Leakage current models of thin film silicon-on-insulator devices

1998 ◽  
Vol 72 (10) ◽  
pp. 1199-1201 ◽  
Author(s):  
Hank Shin ◽  
Stella Hong ◽  
Tom Wetteroth ◽  
Syd R. Wilson ◽  
Dieter K. Schroder
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Silicon On Insulator ◽  
Thin Film Silicon
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