The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
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Published By Springer US

9781489907769, 9781489907745

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The Oxidation of Silicides on Silicon

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_9 ◽

1988 ◽

pp. 85-94

Author(s):

F. M. d’Heurle

Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_7 ◽

1988 ◽

pp. 61-74 ◽

Cited By ~ 2

Author(s):

Eugene A. Irene

Keyword(s):

Thin Film ◽

Silicon Dioxide ◽

Silicon Oxidation ◽

Thin Film Silicon

Defect Transformation Process at SiO2/Si Interfaces

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_42 ◽

1988 ◽

pp. 381-388

Author(s):

T. P. Ma ◽

Yasushiro Nishioka ◽

E. F. da Silva

Keyword(s):

Transformation Process

The Gate-Voltage Dependence of Trapping Into Individual Si:SiO2 Interface States

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_37 ◽

1988 ◽

pp. 341-347

Author(s):

M. J. Kirton ◽

M. J. Uren ◽

S. Collins

Keyword(s):

Gate Voltage ◽

Voltage Dependence ◽

Interface States ◽

Gate Voltage Dependence

The Effect of Electrostatic Screening on Energy Positions of Spectra Near SiO2/Si Interfaces

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_27 ◽

1988 ◽

pp. 243-250

Author(s):

R. Browning ◽

M. A. Sobolewski ◽

C. R. Helms

Dependence of SiO2/Si Interface Structures on Oxidation Process

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_26 ◽

1988 ◽

pp. 235-241

Author(s):

Takeo Hattori ◽

Hiroaki Yamagishi ◽

Noboru Koike ◽

Keitaro Imai ◽

Kikuo Yamabe

Keyword(s):

Oxidation Process ◽

Interface Structures

Oxidation of Silicon: Tests of Mechanisms

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_2 ◽

1988 ◽

pp. 17-23 ◽

Cited By ~ 3

Author(s):

Robert H. Doremus

Charge Trapping in SiO2

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_54 ◽

1988 ◽

pp. 487-496 ◽

Cited By ~ 1

Author(s):

D. R. Young

Keyword(s):

Charge Trapping

Nature of Radiation-Induced Point Defects in Amorphous SiO2 and their Role in SiO2-ON-Si Structures

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_31 ◽

1988 ◽

pp. 287-297 ◽

Cited By ~ 45

Author(s):

D. L. Griscom ◽

D. B. Brown ◽

N. S. Saks

Keyword(s):

Point Defects ◽

Amorphous Sio2 ◽

Radiation Induced

Deposition of SiO2 Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD)

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ◽

10.1007/978-1-4899-0774-5_13 ◽

1988 ◽

pp. 119-127 ◽

Cited By ~ 1

Author(s):

D. V. Tsu ◽

S. S. Kim ◽

G. Lucovsky

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Remote Plasma

The Physics and Chemistry of SiO2 and the Si-SiO2 InterfaceLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer US

The Oxidation of Silicides on Silicon

Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation

Defect Transformation Process at SiO2/Si Interfaces

The Gate-Voltage Dependence of Trapping Into Individual Si:SiO2 Interface States

The Effect of Electrostatic Screening on Energy Positions of Spectra Near SiO2/Si Interfaces

Dependence of SiO2/Si Interface Structures on Oxidation Process

Oxidation of Silicon: Tests of Mechanisms

Charge Trapping in SiO2

Nature of Radiation-Induced Point Defects in Amorphous SiO2 and their Role in SiO2-ON-Si Structures

Deposition of SiO2 Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD)

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Latest Publications