scholarly journals Application Specific Integrated Circuits for High Resolution X and Gamma Ray Semiconductor Detectors

Author(s):  
Filippo Mele

AbstractThe increasing demand for performance improvements in radiation detectors, driven by cutting-edge research in nuclear physics, astrophysics and medical imaging, is causing not only a proliferation in the variety of the radiation sensors, but also a growing necessity of tailored solutions for the front-end readout electronics. Within this work, novel solutions for application specific integrated circuits (ASICs) adopted in high-resolution X and $$\upgamma $$ γ  ray spectroscopy applications are studied. In the first part of this work, an ultra-low noise charge sensitive amplifier (CSA) is presented, with specific focus on sub-microsecond filtering, addressing the growing interest in high-luminosity experiments. The CSA demonstrated excellent results with Silicon Drift Detectors (SDDs), and with room temperature Cadmium-Telluride (CdTe) detectors, recording a state-of-the-art noise performance. The integration of the CSA within two full-custom radiation detection instruments realized for the ELETTRA (Trieste, Italy) and SESAME (Allan, Jordan) synchrotrons is also presented. In the second part of this work, an ASIC constellation designed for X-Gamma imaging spectrometer (XGIS) onboard of the THESEUS space mission is described. The presented readout ASIC has a highly customized distributed architecture, and integrates a complete on-chip signal filtering, acquisition and digitization with an ultra-low power consumption.

MRS Bulletin ◽  
1993 ◽  
Vol 18 (6) ◽  
pp. 46-51 ◽  
Author(s):  
S.P. Murarka ◽  
J. Steigerwald ◽  
R.J. Gutmann

Continuing advances in the fields of very-large-scale integration (VLSI), ultralarge-scale integration (ULSI), and gigascale integration (GSI), leading to the continuing development of smaller and smaller devices, have continually challenged the fields of materials, processes, and circuit designs. The existing metallization schemes for ohmic contacts, gate metal, and interconnections are inadequate for the ULSI and GSI era. An added concern is the reliability of aluminum and its alloys as the current carrier. Also, the higher resistivity of Al and its use in two-dimensional networks have been considered inadequate, since they lead to unacceptably high values of the so-called interconnection delay or RC delay, especially in microprocessors and application-specific integrated circuits (ICs). Here, R refers to the resistance of the interconnection and C to the total capacitance associated with the interlayer dielectric. For the fastest devices currently available and faster ones of the future, the RC delay must be reduced to such a level that the contribution of RC to switching delays (access time) becomes a small fraction of the total, which is a sum of the inherent device delay associated with the semiconductor, the device geometry and type, and the RC delay.


2021 ◽  
Author(s):  
Michael Mattioli

<div>Field-programmable gate arrays (FPGAs) are remarkably versatile. FPGAs are used in a wide variety of applications and industries where use of application-specific integrated circuits (ASICs) is less economically feasible. Despite the area, cost, and power challenges designers face when integrating FPGAs into devices, they provide significant security and performance benefits. Many of these benefits can be realized in client compute hardware such as laptops, tablets, and smartphones.</div>


2003 ◽  
Author(s):  
Steffen Chemnitz ◽  
Heiko Schafer ◽  
Stephanie Schumacher ◽  
Volodymyr Koziy ◽  
Alexander Fischer ◽  
...  

Author(s):  
Rajesh K. Karmani ◽  
Gul Agha ◽  
Mark S. Squillante ◽  
Joel Seiferas ◽  
Marian Brezina ◽  
...  

2010 ◽  
Vol 128 (4) ◽  
pp. 2381-2381
Author(s):  
Armando Jiménez Flores ◽  
Maximino Peña Guerrero ◽  
Jose J. Negrete Redondo

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