Novel Use of Application-Specific Integrated Circuits in Quartz-Based Permanent Downhole Gauges Increases Reliability Estimates in High-Temperature Applications

Author(s):  
Quanling Zheng ◽  
Elias Garcia ◽  
Aswin Balasubramanian
MRS Bulletin ◽  
2015 ◽  
Vol 40 (5) ◽  
pp. 431-438 ◽  
Author(s):  
Carl-Mikael Zetterling

Abstract


MRS Bulletin ◽  
1993 ◽  
Vol 18 (6) ◽  
pp. 46-51 ◽  
Author(s):  
S.P. Murarka ◽  
J. Steigerwald ◽  
R.J. Gutmann

Continuing advances in the fields of very-large-scale integration (VLSI), ultralarge-scale integration (ULSI), and gigascale integration (GSI), leading to the continuing development of smaller and smaller devices, have continually challenged the fields of materials, processes, and circuit designs. The existing metallization schemes for ohmic contacts, gate metal, and interconnections are inadequate for the ULSI and GSI era. An added concern is the reliability of aluminum and its alloys as the current carrier. Also, the higher resistivity of Al and its use in two-dimensional networks have been considered inadequate, since they lead to unacceptably high values of the so-called interconnection delay or RC delay, especially in microprocessors and application-specific integrated circuits (ICs). Here, R refers to the resistance of the interconnection and C to the total capacitance associated with the interlayer dielectric. For the fastest devices currently available and faster ones of the future, the RC delay must be reduced to such a level that the contribution of RC to switching delays (access time) becomes a small fraction of the total, which is a sum of the inherent device delay associated with the semiconductor, the device geometry and type, and the RC delay.


2021 ◽  
Author(s):  
Michael Mattioli

<div>Field-programmable gate arrays (FPGAs) are remarkably versatile. FPGAs are used in a wide variety of applications and industries where use of application-specific integrated circuits (ASICs) is less economically feasible. Despite the area, cost, and power challenges designers face when integrating FPGAs into devices, they provide significant security and performance benefits. Many of these benefits can be realized in client compute hardware such as laptops, tablets, and smartphones.</div>


2003 ◽  
Author(s):  
Steffen Chemnitz ◽  
Heiko Schafer ◽  
Stephanie Schumacher ◽  
Volodymyr Koziy ◽  
Alexander Fischer ◽  
...  

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000123-000128
Author(s):  
Erick M. Spory

There is an ever-increasing demand for electronics in higher temperature applications, both in variety and volume. In many cases, the actual integrated circuit within the plastic packaging can support operation at higher temperatures, although the packaging and connectivity is unable to do so. Ultimately, there still remains a significant gap in the volume demand required for high temperature integrated circuit lines to justify support of more expensive ceramic solutions by the original component manufacturer vs. the cheaper, high-volume PEM flows. Global Circuit Innovations, Inc. has developed a manufacturable, cost-effective solution to extract the integrated circuit from any plastic encapsulated device and subsequently re-package that device into an identical ceramic footprint, with the ability to maintain high-integrity connectivity to the device and enabling functionality for 1000's of hours at temperatures at 250C and beyond. This process represents a high-value added solution to provide high-temperature integrated circuits for a large spectrum of requirements: low-volume, quick-turn evaluation of integrated circuit prototyping, as well as medium to high-volume production needs for ongoing production needs. Although both die extraction and integrated circuit pad electroless nickel/gold plating have both been performed successfully for many years in the semiconductor industry, Global Circuit Innovations, Inc. has been able to combine the two in a reliable, volume manufacturing flow to satisfy many of the stringent requirements for high-temperature applications.


Author(s):  
Rajesh K. Karmani ◽  
Gul Agha ◽  
Mark S. Squillante ◽  
Joel Seiferas ◽  
Marian Brezina ◽  
...  

2010 ◽  
Vol 128 (4) ◽  
pp. 2381-2381
Author(s):  
Armando Jiménez Flores ◽  
Maximino Peña Guerrero ◽  
Jose J. Negrete Redondo

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