Author(s):  
J. S. Lally ◽  
R. J. Lee

In the 50 year period since the discovery of electron diffraction from crystals there has been much theoretical effort devoted to the calculation of diffracted intensities as a function of crystal thickness, orientation, and structure. However, in many applications of electron diffraction what is required is a simple identification of an unknown structure when some of the shape and orientation parameters required for intensity calculations are not known. In these circumstances an automated method is needed to solve diffraction patterns obtained near crystal zone axis directions that includes the effects of systematic absences of reflections due to lattice symmetry effects and additional reflections due to double diffraction processes.Two programs have been developed to enable relatively inexperienced microscopists to identify unknown crystals from diffraction patterns. Before indexing any given electron diffraction pattern, a set of possible crystal structures must be selected for comparison against the unknown.


Author(s):  
Emil Kodysh ◽  
Nikolay Trekin ◽  
Aleksej Chaganov ◽  
Vladimir Bobrov ◽  
Sergej Shmakov
Keyword(s):  

2021 ◽  
Vol 103 (15) ◽  
Author(s):  
Morad Ebrahimkhas ◽  
Mohsen Hafez-Torbati ◽  
Walter Hofstetter

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zhuo Bin Siu ◽  
Mansoor B. A. Jalil

AbstractA tight-binding (TB) Hamiltonian is derived for strained silicene from a multi-orbital basis. The derivation is based on the Slater–Koster coupling parameters between different orbitals across the silicene lattice and takes into account arbitrary distortion of the lattice under strain, as well as the first and second-order spin–orbit interactions (SOI). The breaking of the lattice symmetry reveals additional SOI terms which were previously neglected. As an exemplary application, we apply the linearized low-energy TB Hamiltonian to model the current-induced spin accumulation in strained silicene coupled to an in-plane magnetization. The interplay between symmetry-breaking and the additional SOI terms induces an out-of-plane spin accumulation. This spin accumulation remains unbalanced after summing over the Fermi surfaces of the occupied bands and the two valleys, and can thus be utilized for spin torque switching.


2021 ◽  
pp. 2100015
Author(s):  
Vegard Skiftestad Olsen ◽  
Vetle Øversjøen ◽  
Daniela Gogova ◽  
Béla Pécz ◽  
Augustinas Galeckas ◽  
...  

PAMM ◽  
2021 ◽  
Vol 20 (1) ◽  
Author(s):  
Rainer Backofen ◽  
Lisa Sahlmann ◽  
Anna Willmann ◽  
Axel Voigt

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